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IPB037N06N3 G-VB Product details
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Product Introduction
**IPB037N06N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology, has excellent conduction performance and low on-resistance, and is suitable for applications requiring high current and low on-resistance. Its maximum drain-source voltage is 60V, and it can support up to 150A of continuous current, suitable for various high-power switching applications.
**IPB037N06N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology, has excellent conduction performance and low on-resistance, and is suitable for applications requiring high current and low on-resistance. Its maximum drain-source voltage is 60V, and it can support up to 150A of continuous current, suitable for various high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**:
The low RDS(ON) value and high current carrying capacity of IPB037N06N3 G-VB make it very suitable for use in power management modules, such as DC-DC converters and power switches. Its high efficiency and low power consumption characteristics help reduce the heat and power loss of the system.
2. **Motor drive**:
In motor drive systems, this MOSFET can be used as a switching element to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance enable the motor drive system to operate more stably and improve the overall efficiency of the system.
3. **High power switch**:
In high power switching applications, such as power amplifiers and high power load control, the high current and high withstand voltage characteristics of IPB037N06N3 G-VB can meet the requirements. In these applications, this MOSFET can provide reliable performance under extreme operating conditions.
4. **Automotive Electronics**:
In automotive electronic devices, the high current capability and low power consumption of this MOSFET make it suitable for various automotive electronic modules, such as electric power steering systems and on-board chargers. It can operate stably under harsh environmental conditions, ensuring the reliability of the vehicle system.
1. **Power management**:
The low RDS(ON) value and high current carrying capacity of IPB037N06N3 G-VB make it very suitable for use in power management modules, such as DC-DC converters and power switches. Its high efficiency and low power consumption characteristics help reduce the heat and power loss of the system.
2. **Motor drive**:
In motor drive systems, this MOSFET can be used as a switching element to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance enable the motor drive system to operate more stably and improve the overall efficiency of the system.
3. **High power switch**:
In high power switching applications, such as power amplifiers and high power load control, the high current and high withstand voltage characteristics of IPB037N06N3 G-VB can meet the requirements. In these applications, this MOSFET can provide reliable performance under extreme operating conditions.
4. **Automotive Electronics**:
In automotive electronic devices, the high current capability and low power consumption of this MOSFET make it suitable for various automotive electronic modules, such as electric power steering systems and on-board chargers. It can operate stably under harsh environmental conditions, ensuring the reliability of the vehicle system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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