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IPB034N06N3 G-VB Product details
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IPB034N06N3 G-VB is a dual N-channel MOSFET in a TO263-7L package with high current handling capability and low on-resistance, suitable for high-efficiency power conversion and power management. Its drain-source voltage (VDS) is 60V and the maximum on-resistance (RDS(ON)) is as low as 2mΩ@VGS=10V, making it an ideal choice for high-efficiency power management applications. With a continuous drain current (ID) of 150A and advanced trench technology, this MOSFET can operate at high power density and effectively reduce conduction losses.
**IPB034N06N3 G-VB
IPB034N06N3 G-VB is a dual N-channel MOSFET in a TO263-7L package with high current handling capability and low on-resistance, suitable for high-efficiency power conversion and power management. Its drain-source voltage (VDS) is 60V and the maximum on-resistance (RDS(ON)) is as low as 2mΩ@VGS=10V, making it an ideal choice for high-efficiency power management applications. With a continuous drain current (ID) of 150A and advanced trench technology, this MOSFET can operate at high power density and effectively reduce conduction losses.
**IPB034N06N3 G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
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- **Package**: TO263-7L
- **Configuration**: Dual N+N Channel
- **Drain-Source Voltage(VDS)**: 60V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 3V
- **On-Resistance(RDS(ON))**: 2mΩ @ VGS=10V
- **Drain Current(ID)**: 150A
- **Technology**: Trench
**
- **Package**: TO263-7L
- **Configuration**: Dual N+N Channel
- **Drain-Source Voltage(VDS)**: 60V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 3V
- **On-Resistance(RDS(ON))**: 2mΩ @ VGS=10V
- **Drain Current(ID)**: 150A
- **Technology**: Trench
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Domain and module applications：
**Application fields and module description**
1. **Electric vehicle (EV) drive system**
The high current carrying capacity and low on-resistance of IPB034N06N3 G-VB make it very effective in the drive system of electric vehicles, especially in motor control modules, where this MOSFET can efficiently convert electrical energy, reduce heat generation, and increase driving range.
2. **DC-DC converter**
In DC-DC converter applications in power modules or servers, this MOSFET can effectively improve system efficiency due to its low conduction loss, especially in high power density power supplies, where this MOSFET can ensure efficient power conversion and reduce system energy consumption.
3. **Industrial automation and control systems**
In industrial control systems, IPB034N06N3 G-VB can be used to drive and control high-power loads, such as motor drives, pumps and other equipment. Its high current handling capability ensures stable output, while its low on-resistance reduces power loss during equipment operation.
4. **Uninterruptible Power Supply (UPS)**
The high performance of this MOSFET is also suitable for UPS systems, especially when used for high-power backup power supplies, which can quickly respond to load changes and ensure the continuity and stability of power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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