中文
English
IPB034N06L3 G-VB Product details
Back to previous pageProduct introduction：
IPB034N06L3 G-VB Product Introduction
IPB034N06L3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for power conversion and load switching applications. It has excellent on-resistance (RDS(ON)) and high current handling capability, ensuring excellent performance in high-power and high-efficiency applications. Its Trench technology provides lower on-resistance and higher switching speed, thereby reducing power consumption and improving efficiency.
IPB034N06L3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for power conversion and load switching applications. It has excellent on-resistance (RDS(ON)) and high current handling capability, ensuring excellent performance in high-power and high-efficiency applications. Its Trench technology provides lower on-resistance and higher switching speed, thereby reducing power consumption and improving efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB034N06L3 G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Automotive electronics**: The IPB034N06L3 G-VB is suitable for modules for efficient power management in electric vehicles, such as motor control units and battery management systems. Its high current handling capability ensures reliable performance in electric vehicle drive circuits.
2. **Industrial power management**: The low on-resistance and high current capability of the device make it an ideal choice for industrial power modules, especially in scenarios where efficient DC-DC conversion is required. It can be used in power switching applications for uninterruptible power supply (UPS) systems and industrial controllers.
3. **Server and data center**: In server and data center applications that require low power consumption and high efficiency, the IPB034N06L3 G-VB can be used in voltage regulator modules (VRM) and point-of-load conversion (POL) power modules to ensure efficient handling of high current loads.
4. **Consumer Electronics**: In consumer electronics such as high-performance computing devices and game consoles, this MOSFET can be used in power conversion modules to help devices achieve lower power consumption and higher processing efficiency.
IPB034N06L3 G-VB is an ideal choice for many high-power, high-efficiency applications due to its excellent performance and wide applicability.
1. **Automotive electronics**: The IPB034N06L3 G-VB is suitable for modules for efficient power management in electric vehicles, such as motor control units and battery management systems. Its high current handling capability ensures reliable performance in electric vehicle drive circuits.
2. **Industrial power management**: The low on-resistance and high current capability of the device make it an ideal choice for industrial power modules, especially in scenarios where efficient DC-DC conversion is required. It can be used in power switching applications for uninterruptible power supply (UPS) systems and industrial controllers.
3. **Server and data center**: In server and data center applications that require low power consumption and high efficiency, the IPB034N06L3 G-VB can be used in voltage regulator modules (VRM) and point-of-load conversion (POL) power modules to ensure efficient handling of high current loads.
4. **Consumer Electronics**: In consumer electronics such as high-performance computing devices and game consoles, this MOSFET can be used in power conversion modules to help devices achieve lower power consumption and higher processing efficiency.
IPB034N06L3 G-VB is an ideal choice for many high-power, high-efficiency applications due to its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
