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IPB034N03L G-VB Product details
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Product Introduction:
IPB034N03L G-VB is a high-performance, low-resistance single N-channel MOSFET in TO263 package with excellent switching performance and high current handling capability. The device has a maximum drain-source voltage of 30V, a maximum gate-source voltage of ±20V, and an on-resistance of 3.2mΩ at a gate drive voltage of 4.5V and 2.3mΩ at a gate drive voltage of 10V. Its on-current is up to 150A, and it uses advanced trench technology, which makes it excellent in low loss and high efficiency, and is particularly suitable for high current application environments.
IPB034N03L G-VB is a high-performance, low-resistance single N-channel MOSFET in TO263 package with excellent switching performance and high current handling capability. The device has a maximum drain-source voltage of 30V, a maximum gate-source voltage of ±20V, and an on-resistance of 3.2mΩ at a gate drive voltage of 4.5V and 2.3mΩ at a gate drive voltage of 10V. Its on-current is up to 150A, and it uses advanced trench technology, which makes it excellent in low loss and high efficiency, and is particularly suitable for high current application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 3.2mΩ
- @ VGS = 10V: 2.3mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 3.2mΩ
- @ VGS = 10V: 2.3mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples:
IPB034N03L G-VB MOSFET is widely used in high-power conversion and management modules due to its high current handling capability and low on-resistance. It is very suitable for battery management systems and drive circuits in electric vehicles, which can effectively reduce power losses and improve system efficiency. In addition, this device is also commonly used in DC-DC converters, switching power supplies (SMPS) and solar inverters. In these fields, the switching speed, low loss characteristics, and high current handling capability of MOSFET can effectively improve the energy efficiency and reliability of the system.
IPB034N03L G-VB MOSFET is widely used in high-power conversion and management modules due to its high current handling capability and low on-resistance. It is very suitable for battery management systems and drive circuits in electric vehicles, which can effectively reduce power losses and improve system efficiency. In addition, this device is also commonly used in DC-DC converters, switching power supplies (SMPS) and solar inverters. In these fields, the switching speed, low loss characteristics, and high current handling capability of MOSFET can effectively improve the energy efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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