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IPB029N06N3 G-VB Product details
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1. Product Introduction
IPB029N06N3 G-VB is a high-performance single N-channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and ±20V gate voltage (VGS). Its low on-resistance (RDS(ON)) is 12mΩ@VGS=4.5V and 3.2mΩ@VGS=10V, respectively, and it can operate at currents up to 210A. Based on advanced trench technology, this device has excellent conduction performance and efficiency, and is suitable for high-power, high-efficiency applications.
IPB029N06N3 G-VB is a high-performance single N-channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and ±20V gate voltage (VGS). Its low on-resistance (RDS(ON)) is 12mΩ@VGS=4.5V and 3.2mΩ@VGS=10V, respectively, and it can operate at currents up to 210A. Based on advanced trench technology, this device has excellent conduction performance and efficiency, and is suitable for high-power, high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **Electric vehicle (EV) drive module**: IPB029N06N3 G-VB can be used in the drive inverter of electric vehicles. Its low on-resistance and high current capability can effectively improve energy efficiency and reduce power loss.
2. **Switching power supply (SMPS)**: This MOSFET is suitable for server power supply or industrial switching power supply, especially in high-efficiency DC-DC converters. Due to its high current carrying capacity and low on-resistance, it can improve energy efficiency and reduce heat.
3. **Motor control system**: In motor drive and control applications in industrial automation, IPB029N06N3 G-VB can effectively control the start-up and operation of high-current motors to ensure stable and efficient operation of the system.
4. **Photovoltaic inverter**: It can also be used in inverter modules in photovoltaic systems. Due to its low loss and high current capability, it can help improve the overall energy efficiency of solar power generation systems.
The high current handling capability and low RDS(ON) characteristics of this MOSFET enable it to excel in high-power, high-efficiency applications, especially in automotive electronics, industrial control and renewable energy systems.
1. **Electric vehicle (EV) drive module**: IPB029N06N3 G-VB can be used in the drive inverter of electric vehicles. Its low on-resistance and high current capability can effectively improve energy efficiency and reduce power loss.
2. **Switching power supply (SMPS)**: This MOSFET is suitable for server power supply or industrial switching power supply, especially in high-efficiency DC-DC converters. Due to its high current carrying capacity and low on-resistance, it can improve energy efficiency and reduce heat.
3. **Motor control system**: In motor drive and control applications in industrial automation, IPB029N06N3 G-VB can effectively control the start-up and operation of high-current motors to ensure stable and efficient operation of the system.
4. **Photovoltaic inverter**: It can also be used in inverter modules in photovoltaic systems. Due to its low loss and high current capability, it can help improve the overall energy efficiency of solar power generation systems.
The high current handling capability and low RDS(ON) characteristics of this MOSFET enable it to excel in high-power, high-efficiency applications, especially in automotive electronics, industrial control and renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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