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IPB027N10N3 G-VB Product details
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Product Introduction:
IPB027N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its main features include 100V drain-source voltage (VDS) and 4mΩ ultra-low on-resistance (RDS(ON)), ensuring low power consumption and efficient energy conversion, especially suitable for high-power applications. Its superior Trench technology enables it to excel in switching speed and on-resistance, making it very suitable for a variety of power-intensive applications.
IPB027N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its main features include 100V drain-source voltage (VDS) and 4mΩ ultra-low on-resistance (RDS(ON)), ensuring low power consumption and efficient energy conversion, especially suitable for high-power applications. Its superior Trench technology enables it to excel in switching speed and on-resistance, making it very suitable for a variety of power-intensive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Drain current (ID)**: 140A
- **Technology**: Trench technology with low on-resistance and fast switching capability
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Drain current (ID)**: 140A
- **Technology**: Trench technology with low on-resistance and fast switching capability
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **Electric Vehicle (EV) Motor Drive**: This type of MOSFET has high current handling capability and low on-resistance, which can reduce energy loss and is an ideal choice for electric vehicle motor drive, ensuring efficient energy transmission and improving vehicle endurance.
2. **Switching Power Supply (SMPS)**: Due to the fast switching characteristics and low power consumption of the IPB027N10N3 G-VB, it is very suitable for use in switching power supplies, which can improve power conversion efficiency and reduce heat dissipation requirements.
3. **Solar Inverter**: The high current handling capability of this MOSFET makes it suitable for use in solar inverters, helping to improve the efficiency of DC to AC conversion, especially in high-power applications, which can significantly reduce system losses.
4. **Data Center Server Power Module**: In data center and server power management modules, this type of MOSFET can support efficient power conversion, reduce heat generation and improve the overall energy efficiency of the system.
5. **Industrial Automation Equipment**: Due to its high voltage and current capabilities, the IPB027N10N3 G-VB can provide stable power management and high-efficiency control in industrial automation equipment, such as inverters and servo control systems.
1. **Electric Vehicle (EV) Motor Drive**: This type of MOSFET has high current handling capability and low on-resistance, which can reduce energy loss and is an ideal choice for electric vehicle motor drive, ensuring efficient energy transmission and improving vehicle endurance.
2. **Switching Power Supply (SMPS)**: Due to the fast switching characteristics and low power consumption of the IPB027N10N3 G-VB, it is very suitable for use in switching power supplies, which can improve power conversion efficiency and reduce heat dissipation requirements.
3. **Solar Inverter**: The high current handling capability of this MOSFET makes it suitable for use in solar inverters, helping to improve the efficiency of DC to AC conversion, especially in high-power applications, which can significantly reduce system losses.
4. **Data Center Server Power Module**: In data center and server power management modules, this type of MOSFET can support efficient power conversion, reduce heat generation and improve the overall energy efficiency of the system.
5. **Industrial Automation Equipment**: Due to its high voltage and current capabilities, the IPB027N10N3 G-VB can provide stable power management and high-efficiency control in industrial automation equipment, such as inverters and servo control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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