Featured Model

IPB023N06N3 G-VB Product details

Product introduction:

1. Product Introduction

**IPB023N06N3 G-VB** is a high-performance dual N+N channel MOSFET in TO263-7L package, designed for high-efficiency power conversion and switching applications. The device has a drain-source voltage (VDS) of 60V, an on-resistance (RDS(ON)) of only 2mΩ at a gate-source voltage (VGS) of 10V, and can support a continuous drain current of up to 150A. Based on advanced Trench technology, it improves efficiency while providing low conduction losses and excellent thermal performance, making it ideal for applications with high current requirements.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Dual-N+N 60V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Dual-N+N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Dual-N+N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Dual-N+N
2. Detailed parameter description

- **Model**: IPB023N06N3 G-VB
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: Fast switching characteristics, suitable for high frequency operation

Domain and module applications:

3. Applicable fields and modules

**IPB023N06N3 G-VB** MOSFET is widely used in various fields that require high current and high efficiency conversion. The following are some typical applications:

- **Electric Vehicle (EV) Power System**: In the power management module and motor controller of electric vehicles, this MOSFET can handle high current, reduce power loss, and improve battery life.

- **Server Power and Data Center**: Its high current and low conduction loss characteristics are very suitable for high-efficiency power modules in data centers, ensuring the stability and reliability of server equipment during continuous operation.

- **DC-DC Converter**: In high-efficiency DC-DC converter applications, IPB023N06N3 G-VB can achieve fast switching and low loss, optimizing conversion efficiency.

- **Industrial Automation Equipment**: In high-current driven industrial applications, such as robots and automated machinery control systems, the device can provide reliable power drive and improve system efficiency and stability.

- **Solar Inverter**: This MOSFET can also be applied to inverter modules in solar power generation systems to help improve energy conversion efficiency and ensure efficient and stable power transmission.

This MOSFET is not only suitable for occasions requiring high-efficiency energy conversion, but also maintains excellent performance and long life in high temperature environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat