IPB023N06N3 G-VB Product details
Product introduction:
**IPB023N06N3 G-VB** is a high-performance dual N+N channel MOSFET in TO263-7L package, designed for high-efficiency power conversion and switching applications. The device has a drain-source voltage (VDS) of 60V, an on-resistance (RDS(ON)) of only 2mΩ at a gate-source voltage (VGS) of 10V, and can support a continuous drain current of up to 150A. Based on advanced Trench technology, it improves efficiency while providing low conduction losses and excellent thermal performance, making it ideal for applications with high current requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
- **Model**: IPB023N06N3 G-VB
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: Fast switching characteristics, suitable for high frequency operation
Domain and module applications:
**IPB023N06N3 G-VB** MOSFET is widely used in various fields that require high current and high efficiency conversion. The following are some typical applications:
- **Electric Vehicle (EV) Power System**: In the power management module and motor controller of electric vehicles, this MOSFET can handle high current, reduce power loss, and improve battery life.
- **Server Power and Data Center**: Its high current and low conduction loss characteristics are very suitable for high-efficiency power modules in data centers, ensuring the stability and reliability of server equipment during continuous operation.
- **DC-DC Converter**: In high-efficiency DC-DC converter applications, IPB023N06N3 G-VB can achieve fast switching and low loss, optimizing conversion efficiency.
- **Industrial Automation Equipment**: In high-current driven industrial applications, such as robots and automated machinery control systems, the device can provide reliable power drive and improve system efficiency and stability.
- **Solar Inverter**: This MOSFET can also be applied to inverter modules in solar power generation systems to help improve energy conversion efficiency and ensure efficient and stable power transmission.
This MOSFET is not only suitable for occasions requiring high-efficiency energy conversion, but also maintains excellent performance and long life in high temperature environments.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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