中文
English
IPB023N04N G-VB Product details
Back to previous pageProduct introduction：
1. IPB023N04N G-VB MOSFET Product Introduction
IPB023N04N G-VB is an N-channel power MOSFET in TO-263 package, designed for high-efficiency and high-performance switching applications. It has a rated maximum drain-source voltage of 40V, extremely low on-resistance and high current carrying capacity, making it very suitable for applications requiring high current and low loss. The device uses advanced trench technology (Trench), providing lower on-resistance and better switching performance while ensuring its reliability in high-power applications.
IPB023N04N G-VB is an N-channel power MOSFET in TO-263 package, designed for high-efficiency and high-performance switching applications. It has a rated maximum drain-source voltage of 40V, extremely low on-resistance and high current carrying capacity, making it very suitable for applications requiring high current and low loss. The device uses advanced trench technology (Trench), providing lower on-resistance and better switching performance while ensuring its reliability in high-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB023N04N G-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V, 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V, 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB023N04N G-VB
1. **Automotive electronics**: Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in power control modules of electric vehicles (EVs), such as motor drives and battery management systems. These applications require efficient power conversion and minimal heat loss, and the IPB023N04N G-VB provides excellent performance in these scenarios.
2. **Server and data center power supply**: Modern data centers require efficient power management systems. With its low conduction loss and high switching efficiency, the IPB023N04N G-VB is often used in synchronous rectification and DC-DC converters of server power modules to help improve power conversion efficiency and reduce energy consumption.
3. **Industrial power supply and UPS system**: This MOSFET is suitable for inverter or rectifier modules in uninterruptible power supplies (UPS) and industrial power supplies, requiring high reliability, high efficiency and the ability to handle large currents. Its low on-resistance enables it to reduce power losses, thereby improving the overall efficiency of the system.
4. **Power management in consumer electronics**: In high-power consumer electronic devices such as large TVs, game consoles, and smart home devices, the IPB023N04N G-VB can be used in power conversion modules to provide stable voltage and efficient current management.
In summary, the IPB023N04N G-VB MOSFET performs well in multiple industries and application scenarios, especially in high-efficiency, high-power switching applications, and has been widely used due to its low loss and high performance.
1. **Automotive electronics**: Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in power control modules of electric vehicles (EVs), such as motor drives and battery management systems. These applications require efficient power conversion and minimal heat loss, and the IPB023N04N G-VB provides excellent performance in these scenarios.
2. **Server and data center power supply**: Modern data centers require efficient power management systems. With its low conduction loss and high switching efficiency, the IPB023N04N G-VB is often used in synchronous rectification and DC-DC converters of server power modules to help improve power conversion efficiency and reduce energy consumption.
3. **Industrial power supply and UPS system**: This MOSFET is suitable for inverter or rectifier modules in uninterruptible power supplies (UPS) and industrial power supplies, requiring high reliability, high efficiency and the ability to handle large currents. Its low on-resistance enables it to reduce power losses, thereby improving the overall efficiency of the system.
4. **Power management in consumer electronics**: In high-power consumer electronic devices such as large TVs, game consoles, and smart home devices, the IPB023N04N G-VB can be used in power conversion modules to provide stable voltage and efficient current management.
In summary, the IPB023N04N G-VB MOSFET performs well in multiple industries and application scenarios, especially in high-efficiency, high-power switching applications, and has been widely used due to its low loss and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
