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IPB022N04L G-VB Product details
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IPB022N04L G-VB Product Introduction
IPB022N04L G-VB is a high-efficiency single-channel N-type power MOSFET in TO263 package, designed for applications requiring low on-resistance and high current carrying capacity. It has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, enabling it to operate reliably in high-power and fast-switching scenarios. With its advanced Trench technology, IPB022N04L G-VB provides extremely low on-resistance at low gate drive voltage, which helps improve system efficiency and reduce power losses.
IPB022N04L G-VB is a high-efficiency single-channel N-type power MOSFET in TO263 package, designed for applications requiring low on-resistance and high current carrying capacity. It has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, enabling it to operate reliably in high-power and fast-switching scenarios. With its advanced Trench technology, IPB022N04L G-VB provides extremely low on-resistance at low gate drive voltage, which helps improve system efficiency and reduce power losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB022N04L G-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules of IPB022N04L G-VB
IPB022N04L G-VB is widely used in various electronic systems that require efficient power management and fast switching due to its high current carrying capacity, low on-resistance and efficient switching performance. Its typical application areas include:
1. **Automotive electronic systems**: The high current capability of MOSFET is very suitable for automotive power modules, such as power control in electric power steering, braking systems, and automotive lighting systems.
2. **DC-DC converters**: Due to its low on-resistance and fast switching performance, the device performs well in buck and boost converters, helping to improve conversion efficiency and reduce power losses.
3. **Power tools and industrial control systems**: High current and reliable power transmission make this MOSFET ideal for power modules of power tools and industrial motor control systems, capable of providing stable power output.
4. **Server power supply**: In the design of efficient power supplies in servers and data centers, the low power consumption and high current handling capability of the device can reduce heat generation and improve overall efficiency.
IPB022N04L G-VB is widely used in various electronic systems that require efficient power management and fast switching due to its high current carrying capacity, low on-resistance and efficient switching performance. Its typical application areas include:
1. **Automotive electronic systems**: The high current capability of MOSFET is very suitable for automotive power modules, such as power control in electric power steering, braking systems, and automotive lighting systems.
2. **DC-DC converters**: Due to its low on-resistance and fast switching performance, the device performs well in buck and boost converters, helping to improve conversion efficiency and reduce power losses.
3. **Power tools and industrial control systems**: High current and reliable power transmission make this MOSFET ideal for power modules of power tools and industrial motor control systems, capable of providing stable power output.
4. **Server power supply**: In the design of efficient power supplies in servers and data centers, the low power consumption and high current handling capability of the device can reduce heat generation and improve overall efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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