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IPB020NE7N3 G-VB Product details

Product introduction:

1. IPB020NE7N3 G-VB Product Introduction:
IPB020NE7N3 G-VB is a high-performance single-channel N-channel MOSFET provided by Infineon, packaged in TO263. This MOSFET has excellent current carrying capacity and a maximum drain-source voltage (VDS) of 80V, making it suitable for high-power applications. Its on-resistance RDS(ON) is as low as 3.1mΩ@VGS=10V, ensuring low power consumption under high current load. This product uses Trench technology to provide lower conduction losses and faster switching speeds, making it very suitable for a variety of high-efficiency power conversion and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 230A 3.1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

2. Detailed parameter description of IPB020NE7N3 G-VB:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 230A
- **Technology type**: Trench

Domain and module applications:

3. Application fields and modules:
1. **Electric vehicle drive system**: The high current capability and low on-resistance of IPB020NE7N3 G-VB make it very suitable for use in the drive system of electric vehicles. In the inverter of electric vehicles, it can efficiently handle the conversion requirements of high current in motor control, ensuring the efficient operation and reliability of the system.

2. **DC-DC converter**: In the field of power management, such as DC-DC converters in servers and data centers, this MOSFET can complete energy conversion at high efficiency, provide lower power consumption and heat dissipation, and is suitable for high power density power supply design.

3. **Photovoltaic inverter**: Inverters in photovoltaic systems usually require efficient and reliable switching devices. The high current handling capability of IPB020NE7N3 G-VB makes it very suitable for handling energy conversion and inversion operations in photovoltaic systems, helping to improve the overall efficiency of the system.

4. **Uninterruptible Power Supply (UPS)**: This MOSFET is suitable for high current applications in UPS systems. It can effectively handle the current management and output of the UPS system in the event of a power outage to ensure continuous power supply.

With these features and advantages, the IPB020NE7N3 G-VB has become an indispensable component in efficient power management and high current conversion systems.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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