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IPB020N04N G-VB Product details
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Product Introduction
**IPB020N04N G-VB** is a dual N-type MOSFET in TO263-7L package. It is designed for high current and high efficiency applications, capable of operating at drain-source voltages up to 40V and a maximum drain current of 200A. The MOSFET uses Trench technology and has an extremely low on-resistance (1mΩ @ VGS=10V), ensuring low power consumption and high efficiency in high current applications. This product is ideal for applications requiring high current and efficient energy conversion.
**IPB020N04N G-VB** is a dual N-type MOSFET in TO263-7L package. It is designed for high current and high efficiency applications, capable of operating at drain-source voltages up to 40V and a maximum drain current of 200A. The MOSFET uses Trench technology and has an extremely low on-resistance (1mΩ @ VGS=10V), ensuring low power consumption and high efficiency in high current applications. This product is ideal for applications requiring high current and efficient energy conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Package**: TO263-7L
- **Configuration**: Dual N-type MOSFET (N+N)
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
- **Package**: TO263-7L
- **Configuration**: Dual N-type MOSFET (N+N)
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **Power management system**: Due to its high current handling capability and low on-resistance, the IPB020N04N G-VB is ideally suited for high current power management systems such as DC-DC converters and power distribution networks. It can efficiently manage high current loads, reduce power consumption, and improve the overall performance of the power system.
2. **High power switch**: In high power switching applications, this MOSFET is capable of handling high currents and is suitable for switch mode power supplies (SMPS) and motor drive circuits. Its low on-resistance ensures efficient energy transfer and reduces heat loss, making it suitable for use in industrial and automotive applications.
3. **Electric vehicle power management**: In the power management system of electric vehicles, the high current handling capability and low on-resistance of this MOSFET make it ideal for battery management systems and power conversion modules. It can effectively control the current and improve the efficiency and safety of the system.
4. **High power LED driver**: The IPB020N04N G-VB can also be used in high power LED drivers. It can handle high current and provide stable switching performance, ensuring efficient and reliable operation of LED lamps at high power.
5. **Industrial Motor Control**: In industrial motor control modules, the low on-resistance and high current capability of this MOSFET can improve the driving performance and energy efficiency of the motor. It is suitable for driving high-power motors and controlling high-current loads, ensuring stable operation and long life of industrial equipment.
1. **Power management system**: Due to its high current handling capability and low on-resistance, the IPB020N04N G-VB is ideally suited for high current power management systems such as DC-DC converters and power distribution networks. It can efficiently manage high current loads, reduce power consumption, and improve the overall performance of the power system.
2. **High power switch**: In high power switching applications, this MOSFET is capable of handling high currents and is suitable for switch mode power supplies (SMPS) and motor drive circuits. Its low on-resistance ensures efficient energy transfer and reduces heat loss, making it suitable for use in industrial and automotive applications.
3. **Electric vehicle power management**: In the power management system of electric vehicles, the high current handling capability and low on-resistance of this MOSFET make it ideal for battery management systems and power conversion modules. It can effectively control the current and improve the efficiency and safety of the system.
4. **High power LED driver**: The IPB020N04N G-VB can also be used in high power LED drivers. It can handle high current and provide stable switching performance, ensuring efficient and reliable operation of LED lamps at high power.
5. **Industrial Motor Control**: In industrial motor control modules, the low on-resistance and high current capability of this MOSFET can improve the driving performance and energy efficiency of the motor. It is suitable for driving high-power motors and controlling high-current loads, ensuring stable operation and long life of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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