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IPB019N06L3 G-VB Product details
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1. IPB019N06L3 G-VB Product Introduction
IPB019N06L3 G-VB is a high-performance single N-channel MOSFET in a TO263 package. It is designed for applications that require high current handling capability and low on-resistance. With a drain-source voltage (VDS) of 60V and a drain current (ID) of up to 270A, it is able to effectively handle high currents and high power loads. The MOSFET uses Trench technology, which provides very low on-resistance, allowing the device to excel in high-efficiency power conversion and switching applications. Its on-resistance (RDS(ON)) is 7mΩ and 2.5mΩ at gate-source voltages of 4.5V and 10V, respectively, ensuring excellent performance and low power consumption in high-current applications.
IPB019N06L3 G-VB is a high-performance single N-channel MOSFET in a TO263 package. It is designed for applications that require high current handling capability and low on-resistance. With a drain-source voltage (VDS) of 60V and a drain current (ID) of up to 270A, it is able to effectively handle high currents and high power loads. The MOSFET uses Trench technology, which provides very low on-resistance, allowing the device to excel in high-efficiency power conversion and switching applications. Its on-resistance (RDS(ON)) is 7mΩ and 2.5mΩ at gate-source voltages of 4.5V and 10V, respectively, ensuring excellent performance and low power consumption in high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IPB019N06L3 G-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
1. **Power switch**: The high drain current and low on-resistance of IPB019N06L3 G-VB make it very suitable for power switching applications, such as power management systems and high-power power switches. These applications require MOSFETs to handle high currents and maintain low power consumption during switching operations.
2. **DC-DC converter**: In DC-DC converters, IPB019N06L3 G-VB can be used as an efficient switching element. Its low on-resistance reduces power loss during the conversion process and improves overall efficiency. Especially in applications that require high current output, it can effectively improve the performance of the converter.
3. **Electric vehicle power management**: The power management system in electric vehicles needs to handle large amounts of current, especially when driving motors or charging batteries. The high drain current and low on-resistance of this MOSFET make it very suitable for use in such high-current environments, providing reliable current control and power management.
4. **Industrial Power**: In industrial power equipment, the IPB019N06L3 G-VB can be used for high current switching and power conversion. These devices usually require components that can handle high power loads and have high efficiency. The low on-resistance characteristics of the IPB019N06L3 G-VB meet these requirements.
5. **Computer Power**: In high-performance computer power supplies, especially servers and workstations, the IPB019N06L3 G-VB can be used as a main power switch or for power management of high-power components. Its low on-resistance can reduce power losses and improve the overall efficiency of the system.
6. **LED Driver**: In high-power LED driver applications, the IPB019N06L3 G-VB provides stable current control to ensure stable operation of LEDs in high current environments. Its high current handling capability and low power consumption make it very suitable for driving systems for high-power LED lamps.
These application examples demonstrate the benefits of the IPB019N06L3 G-VB in a variety of high current and high power applications, especially where efficient switching and low power consumption are required.
1. **Power switch**: The high drain current and low on-resistance of IPB019N06L3 G-VB make it very suitable for power switching applications, such as power management systems and high-power power switches. These applications require MOSFETs to handle high currents and maintain low power consumption during switching operations.
2. **DC-DC converter**: In DC-DC converters, IPB019N06L3 G-VB can be used as an efficient switching element. Its low on-resistance reduces power loss during the conversion process and improves overall efficiency. Especially in applications that require high current output, it can effectively improve the performance of the converter.
3. **Electric vehicle power management**: The power management system in electric vehicles needs to handle large amounts of current, especially when driving motors or charging batteries. The high drain current and low on-resistance of this MOSFET make it very suitable for use in such high-current environments, providing reliable current control and power management.
4. **Industrial Power**: In industrial power equipment, the IPB019N06L3 G-VB can be used for high current switching and power conversion. These devices usually require components that can handle high power loads and have high efficiency. The low on-resistance characteristics of the IPB019N06L3 G-VB meet these requirements.
5. **Computer Power**: In high-performance computer power supplies, especially servers and workstations, the IPB019N06L3 G-VB can be used as a main power switch or for power management of high-power components. Its low on-resistance can reduce power losses and improve the overall efficiency of the system.
6. **LED Driver**: In high-power LED driver applications, the IPB019N06L3 G-VB provides stable current control to ensure stable operation of LEDs in high current environments. Its high current handling capability and low power consumption make it very suitable for driving systems for high-power LED lamps.
These application examples demonstrate the benefits of the IPB019N06L3 G-VB in a variety of high current and high power applications, especially where efficient switching and low power consumption are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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