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IPB016N06L3 G-VB Product details
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1. IPB016N06L3 G-VB Product Introduction
IPB016N06L3 G-VB is a high-performance dual N-channel MOSFET in TO263-7L package. The drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and the gate threshold voltage (Vth) is 3V. Its on-resistance is 2mΩ @ VGS=10V, the maximum drain current reaches 150A, and it adopts advanced Trench technology. The dual N-channel configuration of this MOSFET makes it suitable for applications requiring high current and high switching efficiency, and can provide excellent performance in high voltage environments.
IPB016N06L3 G-VB is a high-performance dual N-channel MOSFET in TO263-7L package. The drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and the gate threshold voltage (Vth) is 3V. Its on-resistance is 2mΩ @ VGS=10V, the maximum drain current reaches 150A, and it adopts advanced Trench technology. The dual N-channel configuration of this MOSFET makes it suitable for applications requiring high current and high switching efficiency, and can provide excellent performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. Detailed parameter description of IPB016N06L3 G-VB
- **Package type**: TO263-7L
- **Channel type**: Dual N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Power dissipation**: Approximately 85W
- **Technology type**: Trench
- **Input capacitance (Ciss)**: Approximately 3000 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 60V
- **Package type**: TO263-7L
- **Channel type**: Dual N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Power dissipation**: Approximately 85W
- **Technology type**: Trench
- **Input capacitance (Ciss)**: Approximately 3000 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 60V
Domain and module applications：
3. Application fields and modules of IPB016N06L3 G-VB
The high current handling capability and low on-resistance of IPB016N06L3 G-VB enable it to perform well in multiple high-power applications. Here are some typical application scenarios:
1. **High-power switching power supply**: In high-power switching power supply systems, such as server power supplies and industrial power supplies, this MOSFET can maintain low power consumption at high currents and high switching frequencies, improving the efficiency and stability of the overall system.
2. **Electric vehicle control system**: In the power control system of electric vehicles, IPB016N06L3 G-VB can be used to drive motors and manage battery packs. Its dual N-channel design can effectively share high current loads and improve system reliability and response speed.
3. **Battery Management System (BMS)**: In the battery management system, this MOSFET can be used for battery charge and discharge management. Its low on-resistance helps reduce power losses, improve system efficiency, and can handle high currents to accommodate different types of battery configurations.
4. **High-efficiency power conversion**: In applications that require high-efficiency power conversion, such as consumer electronics and communications equipment, the MOSFET's dual N-channel design provides excellent switching performance for high-power conversion and regulation modules.
5. **DC-DC converters**: In DC-DC converters, the MOSFET's low RDS(ON) and high current handling capability make it ideal for efficient voltage conversion and current regulation, improving conversion efficiency and system stability.
The IPB016N06L3 G-VB's high current capability, low on-resistance, and high switching frequency capabilities enable it to excel in these high-power, high-efficiency applications, ensuring the reliability and efficiency of the power system.
The high current handling capability and low on-resistance of IPB016N06L3 G-VB enable it to perform well in multiple high-power applications. Here are some typical application scenarios:
1. **High-power switching power supply**: In high-power switching power supply systems, such as server power supplies and industrial power supplies, this MOSFET can maintain low power consumption at high currents and high switching frequencies, improving the efficiency and stability of the overall system.
2. **Electric vehicle control system**: In the power control system of electric vehicles, IPB016N06L3 G-VB can be used to drive motors and manage battery packs. Its dual N-channel design can effectively share high current loads and improve system reliability and response speed.
3. **Battery Management System (BMS)**: In the battery management system, this MOSFET can be used for battery charge and discharge management. Its low on-resistance helps reduce power losses, improve system efficiency, and can handle high currents to accommodate different types of battery configurations.
4. **High-efficiency power conversion**: In applications that require high-efficiency power conversion, such as consumer electronics and communications equipment, the MOSFET's dual N-channel design provides excellent switching performance for high-power conversion and regulation modules.
5. **DC-DC converters**: In DC-DC converters, the MOSFET's low RDS(ON) and high current handling capability make it ideal for efficient voltage conversion and current regulation, improving conversion efficiency and system stability.
The IPB016N06L3 G-VB's high current capability, low on-resistance, and high switching frequency capabilities enable it to excel in these high-power, high-efficiency applications, ensuring the reliability and efficiency of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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