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IPB015N04N G-VB Product details
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IPB015N04N G-VB Product Introduction
IPB015N04N G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency power conversion applications. It has excellent low on-resistance and high current handling capability, especially suitable for fields requiring strict power management and efficient switching operation. This MOSFET uses Trench technology to provide stable performance in high current environment.
IPB015N04N G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency power conversion applications. It has excellent low on-resistance and high current handling capability, especially suitable for fields requiring strict power management and efficient switching operation. This MOSFET uses Trench technology to provide stable performance in high current environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB015N04N G-VB parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- 2.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- 2.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules of IPB015N04N G-VB
1. **High-efficiency DC-DC converter**: IPB015N04N G-VB is widely used in high-efficiency DC-DC converters, which can handle large currents with extremely low on-resistance, reduce energy loss, and improve overall conversion efficiency. It is suitable for switching elements in power modules to support efficient power conversion and voltage regulation.
2. **Electric vehicle power management**: Due to its excellent low on-resistance and high current handling capability, this MOSFET is suitable for power management systems in electric vehicles, such as battery management, power conversion, and motor drives, ensuring high efficiency and reliability.
3. **High-power LED driver**: IPB015N04N G-VB can be used in high-power LED driver modules, handling high currents while maintaining low power consumption and high efficiency, and is suitable for power control of lighting equipment.
4. **Industrial Power Control**: In industrial power control systems, this MOSFET can be used as a high current switch to ensure stable and efficient system operation, such as in motor drive and power conditioning modules.
5. **Server and Computer Power**: Suitable for high-power power management modules in server and computer power supplies, handling high current loads, providing efficient power conversion and voltage regulation.
6. **Power Supply and Distribution System**: IPB015N04N G-VB is used for high current switching and power control in power supply and distribution systems, ensuring reliability and efficiency in various high power applications.
Through these application examples, IPB015N04N G-VB shows its excellent performance in applications with high current and high efficiency requirements, and is an ideal choice for handling high current and high power requirements.
1. **High-efficiency DC-DC converter**: IPB015N04N G-VB is widely used in high-efficiency DC-DC converters, which can handle large currents with extremely low on-resistance, reduce energy loss, and improve overall conversion efficiency. It is suitable for switching elements in power modules to support efficient power conversion and voltage regulation.
2. **Electric vehicle power management**: Due to its excellent low on-resistance and high current handling capability, this MOSFET is suitable for power management systems in electric vehicles, such as battery management, power conversion, and motor drives, ensuring high efficiency and reliability.
3. **High-power LED driver**: IPB015N04N G-VB can be used in high-power LED driver modules, handling high currents while maintaining low power consumption and high efficiency, and is suitable for power control of lighting equipment.
4. **Industrial Power Control**: In industrial power control systems, this MOSFET can be used as a high current switch to ensure stable and efficient system operation, such as in motor drive and power conditioning modules.
5. **Server and Computer Power**: Suitable for high-power power management modules in server and computer power supplies, handling high current loads, providing efficient power conversion and voltage regulation.
6. **Power Supply and Distribution System**: IPB015N04N G-VB is used for high current switching and power control in power supply and distribution systems, ensuring reliability and efficiency in various high power applications.
Through these application examples, IPB015N04N G-VB shows its excellent performance in applications with high current and high efficiency requirements, and is an ideal choice for handling high current and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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