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IPB011N04L G-VB Product details
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1. IPB011N04L G-VB Product Introduction
IPB011N04L G-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L. This MOSFET uses Trench technology and is designed for applications that require high switching speed and low on-resistance. Its drain-source voltage (VDS) is 40V and its gate-source voltage (VGS) is ±20V. Its on-resistance (RDS(ON)) is 1mΩ@VGS=10V, providing extremely low power loss and high current carrying capacity, with a maximum drain current (ID) of 200A. This MOSFET performs well under high current and high switching frequency conditions and is widely used in various high-power applications.
IPB011N04L G-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L. This MOSFET uses Trench technology and is designed for applications that require high switching speed and low on-resistance. Its drain-source voltage (VDS) is 40V and its gate-source voltage (VGS) is ±20V. Its on-resistance (RDS(ON)) is 1mΩ@VGS=10V, providing extremely low power loss and high current carrying capacity, with a maximum drain current (ID) of 200A. This MOSFET performs well under high current and high switching frequency conditions and is widely used in various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. Detailed parameter description of IPB011N04L G-VB
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ@VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench technology
- **Maximum power consumption (Ptot)**: 160W
- **Operating temperature range**: -55°C to 150°C
- **Switching frequency**: Suitable for high-frequency switching applications
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ@VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench technology
- **Maximum power consumption (Ptot)**: 160W
- **Operating temperature range**: -55°C to 150°C
- **Switching frequency**: Suitable for high-frequency switching applications
Domain and module applications：
3. Application fields and module examples
1. **High-performance power management**
IPB011N04L G-VB is very suitable for high-performance power management systems due to its extremely low on-resistance and high current carrying capacity. Especially in DC-DC converters and power modules, it can effectively reduce power consumption and improve system efficiency and stability.
2. **Motor drive**
In motor drive applications, this MOSFET is able to handle high currents and high switching frequencies, making it ideal for electric vehicles, power tools and other high-power motor control systems. Its high current capability and low on-resistance can ensure efficient and reliable operation of motor drives.
3. **Computer and server power supplies**
IPB011N04L G-VB plays a key role in computer and server power supplies. It is able to handle high current loads and provide stable power output, thereby ensuring the stability and performance of computer systems.
4. **Power Factor Correction (PFC) Module**
In the Power Factor Correction (PFC) module, the IPB011N04L G-VB can effectively improve the power factor of the system and reduce energy loss. Its high switching speed and low on-resistance make it superior in PFC applications.
5. **Power Switch**
This MOSFET is also suitable for power switching applications such as AC-DC power supplies and battery management systems. Its high switching capability and low power consumption make it an ideal choice to provide efficient switching control in various power switch modules.
With its low on-resistance and high current capability, the IPB011N04L G-VB excels in multiple fields such as high-performance power management, motor drive, power switching, etc., and is suitable for applications requiring high power and high efficiency.
1. **High-performance power management**
IPB011N04L G-VB is very suitable for high-performance power management systems due to its extremely low on-resistance and high current carrying capacity. Especially in DC-DC converters and power modules, it can effectively reduce power consumption and improve system efficiency and stability.
2. **Motor drive**
In motor drive applications, this MOSFET is able to handle high currents and high switching frequencies, making it ideal for electric vehicles, power tools and other high-power motor control systems. Its high current capability and low on-resistance can ensure efficient and reliable operation of motor drives.
3. **Computer and server power supplies**
IPB011N04L G-VB plays a key role in computer and server power supplies. It is able to handle high current loads and provide stable power output, thereby ensuring the stability and performance of computer systems.
4. **Power Factor Correction (PFC) Module**
In the Power Factor Correction (PFC) module, the IPB011N04L G-VB can effectively improve the power factor of the system and reduce energy loss. Its high switching speed and low on-resistance make it superior in PFC applications.
5. **Power Switch**
This MOSFET is also suitable for power switching applications such as AC-DC power supplies and battery management systems. Its high switching capability and low power consumption make it an ideal choice to provide efficient switching control in various power switch modules.
With its low on-resistance and high current capability, the IPB011N04L G-VB excels in multiple fields such as high-performance power management, motor drive, power switching, etc., and is suitable for applications requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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