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IPB009N03L G-VB Product details
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1. IPB009N03L G-VB Product Introduction
IPB009N03L G-VB is a high-performance dual N-channel MOSFET in TO263-7L package. It is designed for high-current, high-efficiency applications with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 1mΩ @ VGS=10V, and the drain current (ID) is up to 200A. It uses advanced Trench technology to maintain low power consumption and excellent switching performance at higher currents.
IPB009N03L G-VB is a high-performance dual N-channel MOSFET in TO263-7L package. It is designed for high-current, high-efficiency applications with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 1mΩ @ VGS=10V, and the drain current (ID) is up to 200A. It uses advanced Trench technology to maintain low power consumption and excellent switching performance at higher currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
II. Detailed parameter description of IPB009N03L G-VB
1. **Package type**: TO263-7L
2. **Configuration**: Dual-N+N-Channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
7. **Drain current (ID)**: 200A
8. **Technology**: Trench technology
9. **Power consumption**: 150W
10. **Maximum pulse current**: 300A
11. **Operating temperature range**: -55°C to +150°C
12. **Package Features**: TO263-7L provides good heat dissipation and high current handling capability.
1. **Package type**: TO263-7L
2. **Configuration**: Dual-N+N-Channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
7. **Drain current (ID)**: 200A
8. **Technology**: Trench technology
9. **Power consumption**: 150W
10. **Maximum pulse current**: 300A
11. **Operating temperature range**: -55°C to +150°C
12. **Package Features**: TO263-7L provides good heat dissipation and high current handling capability.
Domain and module applications：
III. Application fields and module examples
1. **High-power DC-DC converters**:
In high-power DC-DC converters, the dual N-channel configuration of the IPB009N03L G-VB allows efficient current switching and voltage conversion. Its low on-resistance and high current capability ensure high efficiency and low power consumption, making it suitable for use in server power supplies, industrial power supplies, and electric vehicle power conversion systems.
2. **Electric vehicle drive systems**:
In the drive system of electric vehicles, this MOSFET can be used as a switching element in the motor drive module. Its high current handling capability and low on-resistance help improve the energy efficiency and performance of electric vehicles, ensuring the reliability and stability of the motor drive system under high loads.
3. **Computer and server power supplies**:
In computer and server power modules, the IPB009N03L G-VB can be used for efficient power conversion and management. Its high current capability enables it to handle high-load power demands, while its low on-resistance helps reduce energy loss during power conversion and improves overall system efficiency.
4. **Communication Equipment**:
In communications equipment, this MOSFET can be used in power management and signal processing modules. Its excellent switching performance and high current handling capability make it suitable for high-frequency, high-power applications, ensuring the stability of the equipment under high-load and high-frequency operation.
5. **Industrial Automation**:
In industrial automation equipment, the IPB009N03L G-VB is used for high-power power modules and motor drivers. Its high current handling capability and low on-resistance help improve the efficiency and reliability of the system, and is suitable for industrial application scenarios requiring high current and high efficiency.
The IPB009N03L G-VB is a MOSFET that combines high current handling capability with low power consumption, making it ideal for power conversion, electric vehicle drives, and industrial applications that require high efficiency and high stability.
1. **High-power DC-DC converters**:
In high-power DC-DC converters, the dual N-channel configuration of the IPB009N03L G-VB allows efficient current switching and voltage conversion. Its low on-resistance and high current capability ensure high efficiency and low power consumption, making it suitable for use in server power supplies, industrial power supplies, and electric vehicle power conversion systems.
2. **Electric vehicle drive systems**:
In the drive system of electric vehicles, this MOSFET can be used as a switching element in the motor drive module. Its high current handling capability and low on-resistance help improve the energy efficiency and performance of electric vehicles, ensuring the reliability and stability of the motor drive system under high loads.
3. **Computer and server power supplies**:
In computer and server power modules, the IPB009N03L G-VB can be used for efficient power conversion and management. Its high current capability enables it to handle high-load power demands, while its low on-resistance helps reduce energy loss during power conversion and improves overall system efficiency.
4. **Communication Equipment**:
In communications equipment, this MOSFET can be used in power management and signal processing modules. Its excellent switching performance and high current handling capability make it suitable for high-frequency, high-power applications, ensuring the stability of the equipment under high-load and high-frequency operation.
5. **Industrial Automation**:
In industrial automation equipment, the IPB009N03L G-VB is used for high-power power modules and motor drivers. Its high current handling capability and low on-resistance help improve the efficiency and reliability of the system, and is suitable for industrial application scenarios requiring high current and high efficiency.
The IPB009N03L G-VB is a MOSFET that combines high current handling capability with low power consumption, making it ideal for power conversion, electric vehicle drives, and industrial applications that require high efficiency and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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