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IPA90R340C3-VB Product details
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Product Introduction
**IPA90R340C3-VB** is a high voltage N-type MOSFET in TO220F package, specially designed for high voltage and high power applications. This MOSFET adopts **SJ_Multi-EPI** technology and can withstand drain-source voltage up to 900V and drain current of 20A. Its on-resistance is 270mΩ @ VGS=10V, providing stable switching performance and low power consumption, suitable for high voltage power management and power conversion systems.
**IPA90R340C3-VB** is a high voltage N-type MOSFET in TO220F package, specially designed for high voltage and high power applications. This MOSFET adopts **SJ_Multi-EPI** technology and can withstand drain-source voltage up to 900V and drain current of 20A. Its on-resistance is 270mΩ @ VGS=10V, providing stable switching performance and low power consumption, suitable for high voltage power management and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 20A | 270mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applicable fields and modules
1. **High-voltage power converter**: IPA90R340C3-VB is very suitable for high-voltage power converters such as high-voltage DC-DC converters and AC-DC power adapters due to its high drain-source voltage withstand capability of 900V. This MOSFET can provide stable switching performance under high-voltage environment, reduce energy loss, and improve the efficiency and reliability of the power system.
2. **Photovoltaic inverter**: In photovoltaic power generation system, this MOSFET can be used in photovoltaic inverter to convert high-voltage DC power into AC power. Its high voltage withstand capability and low on-resistance ensure the efficient operation and long-term stability of the inverter under high voltage conditions.
3. **Electric vehicle charging system**: The high voltage handling capability of IPA90R340C3-VB makes it suitable for charging systems of electric vehicles, especially in fast charging applications. It can effectively manage high-voltage current, ensure efficient and stable current transmission during charging, reduce charging time and improve system safety.
4. **Industrial Power Management**: In industrial power management modules, this MOSFET provides reliable high voltage handling capabilities, suitable for power control and protection of high power equipment. It can handle high voltage and high current loads, improving the energy efficiency and stability of industrial equipment.
5. **High Voltage Switch Mode Power Supply (SMPS)**: The IPA90R340C3-VB performs well in high voltage switch mode power supplies, suitable for power conversion of high power equipment such as server power supplies, data center power supplies and telecommunications equipment. It can effectively control high voltage power supplies, ensuring efficient energy conversion and low power consumption operation.
1. **High-voltage power converter**: IPA90R340C3-VB is very suitable for high-voltage power converters such as high-voltage DC-DC converters and AC-DC power adapters due to its high drain-source voltage withstand capability of 900V. This MOSFET can provide stable switching performance under high-voltage environment, reduce energy loss, and improve the efficiency and reliability of the power system.
2. **Photovoltaic inverter**: In photovoltaic power generation system, this MOSFET can be used in photovoltaic inverter to convert high-voltage DC power into AC power. Its high voltage withstand capability and low on-resistance ensure the efficient operation and long-term stability of the inverter under high voltage conditions.
3. **Electric vehicle charging system**: The high voltage handling capability of IPA90R340C3-VB makes it suitable for charging systems of electric vehicles, especially in fast charging applications. It can effectively manage high-voltage current, ensure efficient and stable current transmission during charging, reduce charging time and improve system safety.
4. **Industrial Power Management**: In industrial power management modules, this MOSFET provides reliable high voltage handling capabilities, suitable for power control and protection of high power equipment. It can handle high voltage and high current loads, improving the energy efficiency and stability of industrial equipment.
5. **High Voltage Switch Mode Power Supply (SMPS)**: The IPA90R340C3-VB performs well in high voltage switch mode power supplies, suitable for power conversion of high power equipment such as server power supplies, data center power supplies and telecommunications equipment. It can effectively control high voltage power supplies, ensuring efficient energy conversion and low power consumption operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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