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IPA90R1K2C3-VB Product details
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1. IPA90R1K2C3-VB Product Introduction
IPA90R1K2C3-VB is a high-voltage single N-channel MOSFET in a TO220F package designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 900V, enabling it to handle extremely high voltage loads and is suitable for harsh working environments. The device uses super-junction multi-layer epitaxial (SJ_Multi-EPI) technology, which can improve the voltage tolerance and conduction efficiency of the MOSFET. The on-resistance (RDS(ON)) of IPA90R1K2C3-VB is 770mΩ, which can provide stable performance at relatively low voltages and is widely used in high-voltage power supplies and power conversion systems.
IPA90R1K2C3-VB is a high-voltage single N-channel MOSFET in a TO220F package designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 900V, enabling it to handle extremely high voltage loads and is suitable for harsh working environments. The device uses super-junction multi-layer epitaxial (SJ_Multi-EPI) technology, which can improve the voltage tolerance and conduction efficiency of the MOSFET. The on-resistance (RDS(ON)) of IPA90R1K2C3-VB is 770mΩ, which can provide stable performance at relatively low voltages and is widely used in high-voltage power supplies and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IPA90R1K2C3-VB Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Superjunction multi-layer epitaxy (SJ_Multi-EPI)
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Superjunction multi-layer epitaxy (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**: The 900V withstand voltage capability of IPA90R1K2C3-VB makes it very suitable for use as a switching element in high-voltage switching power supplies. Such power supplies are used in industrial equipment, data centers, and communication infrastructure, and need to efficiently process and convert high-voltage power to ensure system stability and reliability.
2. **Power converter**: In high-voltage power converters, this MOSFET can handle extremely high voltage loads and is suitable for various industrial converters and power management systems, which can effectively reduce power consumption and improve power conversion efficiency.
3. **Inverter**: IPA90R1K2C3-VB can be applied to high-voltage inverter systems, such as inverters used in photovoltaic power generation systems. Its high withstand voltage characteristics ensure stable operation during high-voltage DC to AC conversion while reducing switching losses.
4. **Electric vehicle charging system**: For high-voltage charging systems such as electric vehicle charging piles, IPA90R1K2C3-VB provides high voltage resistance and high stability support, and can safely and efficiently handle power conversion and management during high-voltage charging.
5. **High-voltage LED driver**: In high-voltage LED lighting systems, this MOSFET can be used in high-voltage drive circuits to handle the power requirements of high-power LED lamps and ensure stable operation and high efficiency of lighting systems.
6. **Power switch equipment**: IPA90R1K2C3-VB is also suitable for various power switch equipment, such as switch devices for high-voltage power supplies, which can handle high-voltage switching operations and ensure the normal operation and long life of the equipment.
Through these application examples, it can be seen that the powerful capabilities and wide applicability of IPA90R1K2C3-VB in high-voltage applications make it play an important role in fields such as high-voltage power supplies, inverters, and high-voltage LED lighting.
1. **High-voltage switching power supply**: The 900V withstand voltage capability of IPA90R1K2C3-VB makes it very suitable for use as a switching element in high-voltage switching power supplies. Such power supplies are used in industrial equipment, data centers, and communication infrastructure, and need to efficiently process and convert high-voltage power to ensure system stability and reliability.
2. **Power converter**: In high-voltage power converters, this MOSFET can handle extremely high voltage loads and is suitable for various industrial converters and power management systems, which can effectively reduce power consumption and improve power conversion efficiency.
3. **Inverter**: IPA90R1K2C3-VB can be applied to high-voltage inverter systems, such as inverters used in photovoltaic power generation systems. Its high withstand voltage characteristics ensure stable operation during high-voltage DC to AC conversion while reducing switching losses.
4. **Electric vehicle charging system**: For high-voltage charging systems such as electric vehicle charging piles, IPA90R1K2C3-VB provides high voltage resistance and high stability support, and can safely and efficiently handle power conversion and management during high-voltage charging.
5. **High-voltage LED driver**: In high-voltage LED lighting systems, this MOSFET can be used in high-voltage drive circuits to handle the power requirements of high-power LED lamps and ensure stable operation and high efficiency of lighting systems.
6. **Power switch equipment**: IPA90R1K2C3-VB is also suitable for various power switch equipment, such as switch devices for high-voltage power supplies, which can handle high-voltage switching operations and ensure the normal operation and long life of the equipment.
Through these application examples, it can be seen that the powerful capabilities and wide applicability of IPA90R1K2C3-VB in high-voltage applications make it play an important role in fields such as high-voltage power supplies, inverters, and high-voltage LED lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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