IPA90R1K0C3-VB Product details
Product introduction:
IPA90R1K0C3-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage power supply and switching applications. This MOSFET can withstand drain-source voltage up to 900V and adopts SJ_Multi-EPI technology to provide low on-resistance and high power density. At 10V gate-source voltage, its on-resistance is 560mΩ and the maximum drain current is 9A. This device is suitable for power conversion and control circuits that require high voltage tolerance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | 560mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: IPA90R1K0C3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 560mΩ @VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage switching power supply**:
The IPA90R1K0C3-VB is ideal for applications in high-voltage switching power supplies (SMPS), such as power converters and high-power power modules. Its high withstand voltage of 900V can handle the high voltage during AC-DC conversion, ensuring system stability and reliability.
2. **Industrial power conversion**:
In industrial power conversion applications, this MOSFET can be used in power conversion and motor drive systems. The high drain-source breakdown voltage of up to 900V enables it to handle high-voltage loads while maintaining low on-resistance to improve system efficiency and performance.
3. **Power electronic equipment**:
In power electronic equipment, such as high-voltage inverters and power modules, the IPA90R1K0C3-VB provides stable high-voltage switching performance. Its low on-resistance characteristics can reduce energy loss and improve system efficiency, and is suitable for applications requiring high voltage and high power.
4. **New Energy Systems**:
The IPA90R1K0C3-VB is suitable for power management in photovoltaic inverters and wind power generation systems. The device's ability to withstand higher voltages makes it ideal for handling high-voltage DC power supplies, helping to improve the overall efficiency and reliability of renewable energy systems.
5. **High-voltage Power Control**:
This MOSFET is also suitable for high-voltage power control and protection modules, such as power protection circuits and overvoltage protection systems. Its high withstand voltage and low on-resistance characteristics ensure reliable operation in high-voltage environments, making it suitable as a core component for power control and protection.
The IPA90R1K0C3-VB provides excellent high-voltage switching performance and can play an important role in a variety of high-voltage, high-power applications to ensure system stability and efficiency.
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