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IPA90R1K0C3-VB Product details

Product introduction:

Product Introduction:
IPA90R1K0C3-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage power supply and switching applications. This MOSFET can withstand drain-source voltage up to 900V and adopts SJ_Multi-EPI technology to provide low on-resistance and high power density. At 10V gate-source voltage, its on-resistance is 560mΩ and the maximum drain current is 9A. This device is suitable for power conversion and control circuits that require high voltage tolerance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 900V 3.5V 9A 560mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Parameter description:
- **Model**: IPA90R1K0C3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 560mΩ @VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules:

1. **High-voltage switching power supply**:
The IPA90R1K0C3-VB is ideal for applications in high-voltage switching power supplies (SMPS), such as power converters and high-power power modules. Its high withstand voltage of 900V can handle the high voltage during AC-DC conversion, ensuring system stability and reliability.

2. **Industrial power conversion**:
In industrial power conversion applications, this MOSFET can be used in power conversion and motor drive systems. The high drain-source breakdown voltage of up to 900V enables it to handle high-voltage loads while maintaining low on-resistance to improve system efficiency and performance.

3. **Power electronic equipment**:
In power electronic equipment, such as high-voltage inverters and power modules, the IPA90R1K0C3-VB provides stable high-voltage switching performance. Its low on-resistance characteristics can reduce energy loss and improve system efficiency, and is suitable for applications requiring high voltage and high power.

4. **New Energy Systems**:
The IPA90R1K0C3-VB is suitable for power management in photovoltaic inverters and wind power generation systems. The device's ability to withstand higher voltages makes it ideal for handling high-voltage DC power supplies, helping to improve the overall efficiency and reliability of renewable energy systems.

5. **High-voltage Power Control**:
This MOSFET is also suitable for high-voltage power control and protection modules, such as power protection circuits and overvoltage protection systems. Its high withstand voltage and low on-resistance characteristics ensure reliable operation in high-voltage environments, making it suitable as a core component for power control and protection.

The IPA90R1K0C3-VB provides excellent high-voltage switching performance and can play an important role in a variety of high-voltage, high-power applications to ensure system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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