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IPA65R660CFD-VB Product details
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1. IPA65R660CFD-VB Product Introduction
IPA65R660CFD-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is up to 700V, the gate-source voltage (VGS) is ±30V, and the gate threshold voltage (Vth) is 3.5V. The on-resistance of this MOSFET is 390mΩ @ VGS=10V, and the maximum drain current is 10A. It uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent performance in high-voltage applications and is suitable for environments requiring high voltage resistance and low power loss.
IPA65R660CFD-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is up to 700V, the gate-source voltage (VGS) is ±30V, and the gate threshold voltage (Vth) is 3.5V. The on-resistance of this MOSFET is 390mΩ @ VGS=10V, and the maximum drain current is 10A. It uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent performance in high-voltage applications and is suitable for environments requiring high voltage resistance and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IPA65R660CFD-VB Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 390mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Power dissipation**: Approximately 60W
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Approximately 1600 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 700V, suitable for high voltage applications
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 390mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Power dissipation**: Approximately 60W
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Approximately 1600 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 700V, suitable for high voltage applications
Domain and module applications：
III. IPA65R660CFD-VB Application Fields and Modules
The high voltage characteristics and low on-resistance of the IPA65R660CFD-VB MOSFET make it very suitable for multiple high voltage applications. The following are some typical application scenarios:
1. **High voltage power conversion**: In high voltage power conversion applications, such as industrial power supplies and medical power equipment, this MOSFET can handle high voltages while maintaining low power losses, ensuring the efficiency and stability of the power system.
2. **Photovoltaic inverter**: In solar photovoltaic inverters, the IPA65R660CFD-VB is used to convert high voltage DC to AC. It can withstand the high voltage generated by solar panels while providing stable switching performance.
3. **Electric vehicle charging equipment**: This MOSFET is suitable for the high voltage power conversion part in electric vehicle charging piles, ensuring an efficient and safe charging process, especially in charging systems that require high current and high voltage resistance.
4. **High-voltage switches in industrial equipment**: In industrial equipment that requires high-voltage switching, the IPA65R660CFD-VB provides reliable switching capabilities, suitable for motor control and automation equipment, providing high-quality performance with high voltage and low power consumption.
5. **Switching power supply (SMPS)**: In high-power switching power supplies, such as computer power supplies and communication equipment power supplies, this MOSFET can be used for high-voltage switching applications to improve the efficiency and stability of the power system.
The high withstand voltage and low on-resistance characteristics of the IPA65R660CFD-VB make it very suitable for high-voltage applications that require high efficiency and high stability, ensuring excellent performance under various high-voltage operating conditions.
The high voltage characteristics and low on-resistance of the IPA65R660CFD-VB MOSFET make it very suitable for multiple high voltage applications. The following are some typical application scenarios:
1. **High voltage power conversion**: In high voltage power conversion applications, such as industrial power supplies and medical power equipment, this MOSFET can handle high voltages while maintaining low power losses, ensuring the efficiency and stability of the power system.
2. **Photovoltaic inverter**: In solar photovoltaic inverters, the IPA65R660CFD-VB is used to convert high voltage DC to AC. It can withstand the high voltage generated by solar panels while providing stable switching performance.
3. **Electric vehicle charging equipment**: This MOSFET is suitable for the high voltage power conversion part in electric vehicle charging piles, ensuring an efficient and safe charging process, especially in charging systems that require high current and high voltage resistance.
4. **High-voltage switches in industrial equipment**: In industrial equipment that requires high-voltage switching, the IPA65R660CFD-VB provides reliable switching capabilities, suitable for motor control and automation equipment, providing high-quality performance with high voltage and low power consumption.
5. **Switching power supply (SMPS)**: In high-power switching power supplies, such as computer power supplies and communication equipment power supplies, this MOSFET can be used for high-voltage switching applications to improve the efficiency and stability of the power system.
The high withstand voltage and low on-resistance characteristics of the IPA65R660CFD-VB make it very suitable for high-voltage applications that require high efficiency and high stability, ensuring excellent performance under various high-voltage operating conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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