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IPA65R280E6-VB Product details

Product introduction:

Product Introduction: IPA65R280E6-VB

IPA65R280E6-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for applications requiring high voltage handling. Its drain-source voltage (VDS) is up to 700V, supports a gate drive voltage (VGS) of ±30V, and a threshold voltage of 3.5V. The device has a low on-resistance (RDS(ON)) of 160mΩ @ VGS=10V and can provide a maximum drain current of 20A. Using super junction (SJ) multi-epitaxial technology, this MOSFET excels in switching performance, energy efficiency and reliability, and is suitable for a variety of high-voltage and high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 700V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 700V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description:

1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate drive voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Super junction (SJ) multi-epitaxial technology
9. **Maximum power consumption**: 100W
10. **Reverse recovery time (trr)**: 150ns
11. **Gate charge (Qg)**: 120nC
12. **Operating temperature range**: -55°C to 150°C

Domain and module applications:

Application areas and module examples:

1. **High-voltage power converter**: The IPA65R280E6-VB is widely used in high-voltage switch-mode power supplies (SMPS), especially for applications that require high-voltage conversion, such as industrial power supplies, communication equipment, and power modules in data centers. Its high withstand voltage of 700V ensures safe operation under harsh working conditions.

2. **Solar inverter**: This MOSFET is commonly used in inverter modules in solar power generation systems. Its high voltage and low on-resistance characteristics allow the inverter to efficiently convert DC to AC while ensuring high system efficiency and low losses.

3. **Electric vehicle charger**: In electric vehicle (EV) chargers, the IPA65R280E6-VB can cope with the requirements of high voltage and high current, ensuring that the charger operates efficiently and safely during the charging process, suitable for fast charging and high-power application scenarios.

4. **LED Driver**: In high-power LED driver power supplies, this MOSFET is used as the main switching element to ensure efficient operation of LED lamps under high-voltage input conditions. Its stable switching characteristics and low losses help improve energy efficiency.

5. **Uninterruptible Power Supply (UPS)**: The IPA65R280E6-VB is used in UPS systems to control the switching and distribution of high-voltage power to ensure the continuity and stability of power supply. Its high voltage resistance and high current handling capabilities make it an ideal choice for key switching elements in UPS systems.

Combining excellent high-voltage handling capabilities with energy efficiency optimization, this MOSFET is suitable for high-voltage power conversion, electric vehicle charging, LED lighting drivers, and solar inverters that require high reliability and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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