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IPA65R190E6-VB Product details
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1. IPA65R190E6-VB Product Introduction
IPA65R190E6-VB is a high-voltage single N-channel MOSFET in TO220F package, suitable for 700V high-voltage applications. The device adopts super junction (SJ) multi-epitaxial technology, with 20A current capability and 160mΩ on-resistance (@VGS=10V), thus achieving more efficient power switching performance. IPA65R190E6-VB is suitable for application scenarios that require high voltage and high current control, such as industrial power supplies, power tools, solar inverters, etc.
IPA65R190E6-VB is a high-voltage single N-channel MOSFET in TO220F package, suitable for 700V high-voltage applications. The device adopts super junction (SJ) multi-epitaxial technology, with 20A current capability and 160mΩ on-resistance (@VGS=10V), thus achieving more efficient power switching performance. IPA65R190E6-VB is suitable for application scenarios that require high voltage and high current control, such as industrial power supplies, power tools, solar inverters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IPA65R190E6-VB Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial technology
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial technology
Domain and module applications：
III. Application fields and module examples
1. **Industrial power supply**: The 700V withstand voltage of IPA65R190E6-VB makes it very suitable for high-power modules that need to handle high voltage in industrial power supplies. Its super junction structure ensures efficient switching performance and can significantly reduce power loss.
2. **Power tools**: This MOSFET is often used in the drive circuits of power tools, such as high-voltage electric drills and electric saws. These devices require high-voltage operation and high-current output. IPA65R190E6-VB provides reliable power control for these devices through stable power management.
3. **Solar inverter**: In solar inverters, this MOSFET is used to convert DC to AC to ensure efficient power conversion. Its high-voltage withstand capability and low on-resistance can significantly improve the efficiency of power conversion, especially for high-power inverter systems.
4. **Uninterruptible Power Supply (UPS) System**: IPA65R190E6-VB is used as a switching element in UPS to ensure stable power output and quickly switch to backup power when power is interrupted to ensure the continuous operation of key equipment.
5. **High-voltage Lighting System**: This MOSFET is suitable for high-voltage lighting equipment, especially outdoor lighting and industrial lighting, to help manage the switching control of high-voltage power supply and improve the reliability and safety of the circuit.
IPA65R190E6-VB MOSFET demonstrates its superior performance in high-voltage applications, especially in high-voltage and high-current management applications. With its super junction technology, it can reduce system energy consumption while ensuring high efficiency.
1. **Industrial power supply**: The 700V withstand voltage of IPA65R190E6-VB makes it very suitable for high-power modules that need to handle high voltage in industrial power supplies. Its super junction structure ensures efficient switching performance and can significantly reduce power loss.
2. **Power tools**: This MOSFET is often used in the drive circuits of power tools, such as high-voltage electric drills and electric saws. These devices require high-voltage operation and high-current output. IPA65R190E6-VB provides reliable power control for these devices through stable power management.
3. **Solar inverter**: In solar inverters, this MOSFET is used to convert DC to AC to ensure efficient power conversion. Its high-voltage withstand capability and low on-resistance can significantly improve the efficiency of power conversion, especially for high-power inverter systems.
4. **Uninterruptible Power Supply (UPS) System**: IPA65R190E6-VB is used as a switching element in UPS to ensure stable power output and quickly switch to backup power when power is interrupted to ensure the continuous operation of key equipment.
5. **High-voltage Lighting System**: This MOSFET is suitable for high-voltage lighting equipment, especially outdoor lighting and industrial lighting, to help manage the switching control of high-voltage power supply and improve the reliability and safety of the circuit.
IPA65R190E6-VB MOSFET demonstrates its superior performance in high-voltage applications, especially in high-voltage and high-current management applications. With its super junction technology, it can reduce system energy consumption while ensuring high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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