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IPA65R190C6-VB Product details
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1. IPA65R190C6-VB Product Introduction
IPA65R190C6-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage switching applications. The device has a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of ±30V, a gate threshold voltage (Vth) of 3.5V, an on-resistance of 160mΩ @ VGS=10V, and a maximum drain current of 20A. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, this MOSFET provides lower on-resistance and higher efficiency at high voltage, suitable for high-performance power management and conversion systems.
IPA65R190C6-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage switching applications. The device has a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of ±30V, a gate threshold voltage (Vth) of 3.5V, an on-resistance of 160mΩ @ VGS=10V, and a maximum drain current of 20A. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, this MOSFET provides lower on-resistance and higher efficiency at high voltage, suitable for high-performance power management and conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IPA65R190C6-VB Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Power dissipation**: Approximately 125W
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Approximately 1600 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 700V, suitable for high voltage applications
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Power dissipation**: Approximately 125W
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Input capacitance (Ciss)**: Approximately 1600 pF
- **Operating temperature range**: -55°C to 150°C
- **Breakdown voltage margin**: 700V, suitable for high voltage applications
Domain and module applications：
III. Application fields and modules of IPA65R190C6-VB
The high voltage characteristics, low on-resistance and efficient super junction multi-epitaxial technology of IPA65R190C6-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power conversion**: In high voltage power conversion applications, especially server power supplies and power management systems in data centers, this MOSFET provides efficient conversion capabilities and improves the energy efficiency and stability of the system.
2. **Photovoltaic inverter**: This device is suitable for the DC-AC conversion link in solar photovoltaic inverters, and can effectively process the high voltage DC generated by solar panels, supporting efficient and stable energy conversion.
3. **Switching power supply (SMPS)**: IPA65R190C6-VB can be used in medium and high power switching power supplies, such as industrial power supplies, household appliance power supplies, etc. Its high withstand voltage and low conduction loss characteristics enable it to maintain low temperature operation while improving power efficiency.
4. **Electric vehicle charging pile**: In the high-voltage power conversion link of electric vehicle charging piles, IPA65R190C6-VB provides excellent switching performance, supports fast charging applications, and ensures charging stability and safety.
5. **Industrial drive and motor control**: This MOSFET can be used in industrial motor drive and control systems, supports high-voltage operation, and is particularly suitable for occasions that are sensitive to power loss, such as high-efficiency industrial automation equipment.
The high-voltage and high-current capabilities of IPA65R190C6-VB enable it to provide efficient and reliable performance in various high-voltage conversion and drive applications, and is particularly suitable for industrial and energy management fields that require high energy efficiency and long-term stability.
The high voltage characteristics, low on-resistance and efficient super junction multi-epitaxial technology of IPA65R190C6-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power conversion**: In high voltage power conversion applications, especially server power supplies and power management systems in data centers, this MOSFET provides efficient conversion capabilities and improves the energy efficiency and stability of the system.
2. **Photovoltaic inverter**: This device is suitable for the DC-AC conversion link in solar photovoltaic inverters, and can effectively process the high voltage DC generated by solar panels, supporting efficient and stable energy conversion.
3. **Switching power supply (SMPS)**: IPA65R190C6-VB can be used in medium and high power switching power supplies, such as industrial power supplies, household appliance power supplies, etc. Its high withstand voltage and low conduction loss characteristics enable it to maintain low temperature operation while improving power efficiency.
4. **Electric vehicle charging pile**: In the high-voltage power conversion link of electric vehicle charging piles, IPA65R190C6-VB provides excellent switching performance, supports fast charging applications, and ensures charging stability and safety.
5. **Industrial drive and motor control**: This MOSFET can be used in industrial motor drive and control systems, supports high-voltage operation, and is particularly suitable for occasions that are sensitive to power loss, such as high-efficiency industrial automation equipment.
The high-voltage and high-current capabilities of IPA65R190C6-VB enable it to provide efficient and reliable performance in various high-voltage conversion and drive applications, and is particularly suitable for industrial and energy management fields that require high energy efficiency and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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