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IPA60R385CP-VB Product details

Product introduction:

1. IPA60R385CP-VB Product Introduction

IPA60R385CP-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, on-resistance is 320mΩ @ VGS=10V, and maximum drain current is 20A. Using planar technology, this MOSFET provides stable performance and reliability for high-voltage switching and power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. Detailed parameter description of IPA60R385CP-VB

- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Power dissipation**: 125W
- **Technology type**: Planar
- **Input capacitance (Ciss)**: Approximately 2500 pF
- **Operating temperature range**: -55°C to 150°C
- **Safe breakdown voltage margin**: higher than 650V

Domain and module applications:

III. IPA60R385CP-VB Application Fields and Modules

The high voltage and medium on-resistance characteristics of the IPA60R385CP-VB MOSFET make it suitable for the following fields and modules:

1. **High-voltage switching power supply**: In the design of high-voltage switching power supplies (such as industrial power supplies and TV power supplies), the IPA60R385CP-VB provides stable switching performance. Its high voltage withstand capability of 650V and on-resistance of 320mΩ make it suitable for PFC (power factor correction) and main switching circuits, which can improve the efficiency and reliability of the power supply.

2. **Electric vehicle charger**: This MOSFET is suitable for high-voltage power conversion in electric vehicle chargers. Its high voltage withstand capability and reliable performance ensure stability and safety during charging, which is particularly important for fast charging systems.

3. **Solar Inverter**: In solar inverters, the IPA60R385CP-VB can be used for high voltage direct current (HVDC) to alternating current conversion, supporting an efficient energy conversion process. Its high voltage handling capability is suitable for handling high voltage direct current generated by solar panels.

4. **Industrial Drive**: In industrial applications such as motor drives and high power motor control systems, the IPA60R385CP-VB can stably handle high voltage and high current requirements, ensuring the reliability and efficiency of the drive system.

5. **High Voltage Lighting Control**: In high voltage lighting systems such as HID (high intensity discharge lamps) and LED driver controllers, the high voltage capability and medium on-resistance of this MOSFET make it suitable for the regulation of high power lighting, ensuring stable light output and energy efficiency.

The high voltage tolerance and reliable performance of the IPA60R385CP-VB make it excel in a variety of high voltage applications, especially in situations requiring stability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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