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IPA60R199CP-VB Product details
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IPA60R199CP-VB Product Introduction
IPA60R199CP-VB is a high voltage N-Channel MOSFET in TO220F package. This MOSFET is designed for high voltage applications, with a maximum drain-source voltage of 650V and a maximum drain current of 20A, suitable for various high power and high efficiency power conversion systems. It uses SJ_Multi-EPI (super junction multilayer epitaxy) technology to provide lower on-resistance and excellent current handling capability, so that it can still maintain efficient and stable performance in high voltage environments.
IPA60R199CP-VB is a high voltage N-Channel MOSFET in TO220F package. This MOSFET is designed for high voltage applications, with a maximum drain-source voltage of 650V and a maximum drain current of 20A, suitable for various high power and high efficiency power conversion systems. It uses SJ_Multi-EPI (super junction multilayer epitaxy) technology to provide lower on-resistance and excellent current handling capability, so that it can still maintain efficient and stable performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
IPA60R199CP-VB Detailed parameter description
- **Model**: IPA60R199CP-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI (Superjunction Multilayer Epitaxy)
- **Model**: IPA60R199CP-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI (Superjunction Multilayer Epitaxy)
Domain and module applications：
Applications and module examples
1. **High-voltage switch-mode power supply (SMPS)**:
The IPA60R199CP-VB is suitable for use in high-voltage switch-mode power supplies, such as power adapters, LED drivers, and computer power supplies. Due to its high drain-source voltage and low on-resistance, this MOSFET enables efficient power conversion under high voltage conditions, reducing energy loss and improving system reliability.
2. **Power inverter**:
In power inverter applications in renewable energy systems such as photovoltaic and wind power, the IPA60R199CP-VB provides stable high-voltage operation capabilities. Its excellent on-resistance characteristics and super-junction multi-layer epitaxial technology enable it to perform well in high-power conversion, optimize power conversion efficiency and reduce heat generation.
3. **Industrial power management**:
The IPA60R199CP-VB is also used in industrial power management systems, such as industrial motor drives and power conditioning modules. Its high voltage tolerance and good switching performance enable it to handle high power loads, improving system stability and operating efficiency.
4. **High Voltage Power Amplifier**:
In high voltage power amplifiers, the IPA60R199CP-VB is able to provide efficient switching control, suitable for regulating and amplifying high power signals. Its low on-resistance and high current handling capability enable it to perform well in high power applications, helping to improve the overall performance of the power amplifier.
The IPA60R199CP-VB is designed to provide efficient and stable performance in multiple high voltage, high power application scenarios, ensuring system reliability and efficient operation.
1. **High-voltage switch-mode power supply (SMPS)**:
The IPA60R199CP-VB is suitable for use in high-voltage switch-mode power supplies, such as power adapters, LED drivers, and computer power supplies. Due to its high drain-source voltage and low on-resistance, this MOSFET enables efficient power conversion under high voltage conditions, reducing energy loss and improving system reliability.
2. **Power inverter**:
In power inverter applications in renewable energy systems such as photovoltaic and wind power, the IPA60R199CP-VB provides stable high-voltage operation capabilities. Its excellent on-resistance characteristics and super-junction multi-layer epitaxial technology enable it to perform well in high-power conversion, optimize power conversion efficiency and reduce heat generation.
3. **Industrial power management**:
The IPA60R199CP-VB is also used in industrial power management systems, such as industrial motor drives and power conditioning modules. Its high voltage tolerance and good switching performance enable it to handle high power loads, improving system stability and operating efficiency.
4. **High Voltage Power Amplifier**:
In high voltage power amplifiers, the IPA60R199CP-VB is able to provide efficient switching control, suitable for regulating and amplifying high power signals. Its low on-resistance and high current handling capability enable it to perform well in high power applications, helping to improve the overall performance of the power amplifier.
The IPA60R199CP-VB is designed to provide efficient and stable performance in multiple high voltage, high power application scenarios, ensuring system reliability and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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