IPA60R190P6-VB Product details
Product introduction:
IPA60R190P6-VB is an N-channel power MOSFET in TO220F package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 650V and a gate drive voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, and the maximum drain current (ID) is 20A. This MOSFET uses SJ (Super Junction) and Multi-EPI technology, providing excellent power efficiency and fast switching performance, suitable for high voltage, high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate drive voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: SJ (Super Junction) + Multi-EPI technology
9. **Maximum power consumption**: 250W
10. **Reverse recovery time (trr)**: 60ns
11. **Gate charge (Qg)**: 70nC
12. **Operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **Power converters and adapters**: The IPA60R190P6-VB is widely used in AC-DC and DC-DC converters, especially where high voltage and high power handling are required. Its 650V withstand voltage capability and low on-resistance enable it to provide high efficiency and reliability in high-power power adapters and industrial power modules.
2. **Solar inverter**: In solar power generation systems, this MOSFET is used for high-voltage switching applications in inverters. Its high withstand voltage and excellent switching performance support efficient solar power conversion, improving the overall efficiency and stability of the system.
3. **Uninterruptible power supply (UPS)**: The IPA60R190P6-VB is used in UPS systems to handle high voltage and high power power conversion, ensuring that the system can provide stable backup power when power is interrupted. Its high current capability and low on-resistance enable it to work stably under high load conditions.
4. **EV Charging Station**: In EV charging stations, this MOSFET handles high voltage charging requirements, ensuring an efficient and safe charging process. Its high voltage and high current resistance make it suitable for use in EV fast charging systems.
5. **Industrial Inverter**: In power control and inverters for industrial equipment, the IPA60R190P6-VB provides efficient power conversion and switching control. Its high voltage handling capability and low on-resistance make it an excellent performer in large motor control and high power inverters.
The high voltage tolerance and advanced technology of the IPA60R190P6-VB make it an ideal choice for a variety of high power and high voltage applications, especially in systems that require efficient power conversion and stability.
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