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IPA60R190E6-VB Product details
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Product Introduction
**IPA60R190E6-VB** is a high voltage N-type MOSFET in TO220F package. This MOSFET adopts **SJ_Multi-EPI** technology, has a high drain-source voltage of 650V and a current handling capacity of 20A, and an on-resistance of 160mΩ @ VGS=10V. Its design is particularly suitable for high voltage power conversion applications, providing low power consumption and high efficiency, and is widely used in various industrial power supplies and power conversion fields.
**IPA60R190E6-VB** is a high voltage N-type MOSFET in TO220F package. This MOSFET adopts **SJ_Multi-EPI** technology, has a high drain-source voltage of 650V and a current handling capacity of 20A, and an on-resistance of 160mΩ @ VGS=10V. Its design is particularly suitable for high voltage power conversion applications, providing low power consumption and high efficiency, and is widely used in various industrial power supplies and power conversion fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applicable fields and modules
1. **Industrial power converter**: IPA60R190E6-VB is very suitable for industrial power converters such as high-voltage DC-DC converters and AC-DC converters due to its high withstand voltage and low on-resistance. These systems need to handle high voltage and high power conversion. IPA60R190E6-VB can ensure stable switching performance and reduce power consumption, improving system efficiency.
2. **Switch mode power supply (SMPS)**: In a switch mode power supply, this MOSFET optimizes the power conversion process through efficient switching action. Its high voltage and low loss characteristics make it suitable for power management modules for high-power server power supplies, data centers and telecommunications equipment.
3. **Electric vehicle charging system**: The high voltage handling capability and excellent switching characteristics of IPA60R190E6-VB are very suitable for power management modules in electric vehicle charging infrastructure. It can efficiently control the charging current, reduce losses, and ensure the safety and efficiency of the charging process.
4. **Photovoltaic Inverter**: In photovoltaic inverter applications, this MOSFET helps improve the efficiency of converting DC to AC. Its high withstand voltage capability can adapt to the high voltage requirements in solar power generation systems, provide efficient power conversion, and reduce heat loss.
5. **High-voltage LED drive circuit**: In high-voltage LED lighting systems, IPA60R190E6-VB can provide stable current control for LED drive circuits. Its high withstand voltage and low on-resistance make it suitable for lighting systems that need to handle high power and high voltage, such as street lighting and industrial lighting.
1. **Industrial power converter**: IPA60R190E6-VB is very suitable for industrial power converters such as high-voltage DC-DC converters and AC-DC converters due to its high withstand voltage and low on-resistance. These systems need to handle high voltage and high power conversion. IPA60R190E6-VB can ensure stable switching performance and reduce power consumption, improving system efficiency.
2. **Switch mode power supply (SMPS)**: In a switch mode power supply, this MOSFET optimizes the power conversion process through efficient switching action. Its high voltage and low loss characteristics make it suitable for power management modules for high-power server power supplies, data centers and telecommunications equipment.
3. **Electric vehicle charging system**: The high voltage handling capability and excellent switching characteristics of IPA60R190E6-VB are very suitable for power management modules in electric vehicle charging infrastructure. It can efficiently control the charging current, reduce losses, and ensure the safety and efficiency of the charging process.
4. **Photovoltaic Inverter**: In photovoltaic inverter applications, this MOSFET helps improve the efficiency of converting DC to AC. Its high withstand voltage capability can adapt to the high voltage requirements in solar power generation systems, provide efficient power conversion, and reduce heat loss.
5. **High-voltage LED drive circuit**: In high-voltage LED lighting systems, IPA60R190E6-VB can provide stable current control for LED drive circuits. Its high withstand voltage and low on-resistance make it suitable for lighting systems that need to handle high power and high voltage, such as street lighting and industrial lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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