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IPA60R190C6-VB Product details
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1. IPA60R190C6-VB Product Introduction
IPA60R190C6-VB is a high-voltage single N-channel MOSFET in TO220F package with 650V drain-source voltage and 20A drain current. This device uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, providing extremely low on-resistance and excellent switching performance, making it very suitable for efficient power conversion and power management systems, especially in applications with high voltage and high efficiency requirements.
IPA60R190C6-VB is a high-voltage single N-channel MOSFET in TO220F package with 650V drain-source voltage and 20A drain current. This device uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, providing extremely low on-resistance and excellent switching performance, making it very suitable for efficient power conversion and power management systems, especially in applications with high voltage and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IPA60R190C6-VB Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
III. Application fields and module examples
1. **Switching mode power supply (SMPS)**: In the switching mode power supply, IPA60R190C6-VB can effectively improve the conversion efficiency and reduce the power consumption. It is suitable for desktop computers, server power supplies, LED driver power supplies, etc. Its high voltage resistance characteristics enable it to cope with high voltage environments and ensure stable operation in these systems.
2. **Photovoltaic inverter**: This MOSFET can perform efficient DC to AC conversion in solar inverters, and use its low on-resistance and high-voltage handling capabilities to improve the energy transmission efficiency of the system.
3. **Electric vehicle charger**: IPA60R190C6-VB is suitable for on-board chargers and charging piles for electric vehicles. It can handle the fast charging requirements in high voltage environments and ensure the stability and safety of the circuit.
4. **Industrial power management**: In industrial equipment power supplies, this MOSFET can be used for power conversion and regulation of high-voltage equipment, such as inverters and industrial motor drives, to help reduce energy consumption and improve the overall efficiency of the system.
5. **High-voltage lighting system**: In addition, IPA60R190C6-VB can also be applied to high-voltage lighting equipment, such as street lights and building lighting systems. It can effectively control power conversion and improve the stability and durability of the system.
In general, IPA60R190C6-VB is an ideal choice for high-performance and high-stability fields such as power management, photovoltaic inverters, and industrial control with its high withstand voltage of 650V, low on-resistance, and advanced super junction technology.
1. **Switching mode power supply (SMPS)**: In the switching mode power supply, IPA60R190C6-VB can effectively improve the conversion efficiency and reduce the power consumption. It is suitable for desktop computers, server power supplies, LED driver power supplies, etc. Its high voltage resistance characteristics enable it to cope with high voltage environments and ensure stable operation in these systems.
2. **Photovoltaic inverter**: This MOSFET can perform efficient DC to AC conversion in solar inverters, and use its low on-resistance and high-voltage handling capabilities to improve the energy transmission efficiency of the system.
3. **Electric vehicle charger**: IPA60R190C6-VB is suitable for on-board chargers and charging piles for electric vehicles. It can handle the fast charging requirements in high voltage environments and ensure the stability and safety of the circuit.
4. **Industrial power management**: In industrial equipment power supplies, this MOSFET can be used for power conversion and regulation of high-voltage equipment, such as inverters and industrial motor drives, to help reduce energy consumption and improve the overall efficiency of the system.
5. **High-voltage lighting system**: In addition, IPA60R190C6-VB can also be applied to high-voltage lighting equipment, such as street lights and building lighting systems. It can effectively control power conversion and improve the stability and durability of the system.
In general, IPA60R190C6-VB is an ideal choice for high-performance and high-stability fields such as power management, photovoltaic inverters, and industrial control with its high withstand voltage of 650V, low on-resistance, and advanced super junction technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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