IPA60R160C6-VB Product details
Product introduction:
The IPA60R160C6-VB is a high-voltage N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, designed for high-voltage applications. The MOSFET has a gate threshold voltage (Vth) of 3.5V, an on-resistance of 160mΩ @ VGS=10V, and a maximum drain current of 20A. Using Super-Junction (SJ) and Multi-EPI (Multi-EPI) technology, the IPA60R160C6-VB provides high efficiency and low conduction loss, suitable for a variety of high-voltage power supplies and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Power dissipation**: 125W
- **Technology type**: Super-Junction (SJ), Multi-EPI
- **Input capacitance (Ciss)**: About 2000 pF
- **Operating temperature range**: -55°C to 150°C
- **Safe breakdown voltage margin**: higher than 650V
Domain and module applications:
IPA60R160C6-VB MOSFET is widely used in the following fields and modules due to its high voltage capability and low conduction loss:
1. **Switching Power Supply (SMPS)**: This device is widely used in high-voltage switching power supplies, especially in PFC (power factor correction) circuits and main switches in equipment such as TVs, computer power supplies and industrial power supplies. Its high voltage tolerance of 650V and low conduction loss can improve efficiency and reduce heat generation, thereby improving the overall performance of the power supply.
2. **Electric Vehicle Charger**: In high-voltage charging systems, such as electric vehicle (EV) chargers, IPA60R160C6-VB can handle high power conversion requirements and provide reliable support for efficient charging processes. This makes it an ideal choice for electric vehicle charging modules, helping to achieve fast charging and efficient current management.
3. **Inverter**: This MOSFET can be used in solar inverter and UPS (uninterruptible power supply) systems to help achieve efficient energy conversion, especially in solar power generation systems, for converting DC power to AC power. Its high voltage tolerance makes it widely used in high-voltage DC (HVDC) transmission and inverter modules.
4. **Industrial Drive**: The IPA60R160C6-VB is suitable for motor drive control modules for industrial equipment, such as compressors, motors and fan controls. These applications require reliable handling of high currents and high voltages, and the IPA60R160C6-VB provides excellent performance.
5. **High-voltage lamp controller**: In high-voltage lighting equipment such as LED drivers and HID lamp ballasts, the high efficiency and low heat loss performance of this MOSFET ensure reliable lighting control and energy savings.
The high voltage characteristics and excellent energy efficiency of IPA60R160C6-VB make it an ideal choice for high-power, high-reliability applications, especially in areas requiring high voltage and low power consumption, and it has broad application prospects.
Technical support:
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