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IPA50R299CP-VB Product details

Product introduction:

1. IPA50R299CP-VB Product Introduction

IPA50R299CP-VB is a high-voltage N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This device uses Super Junction (SJ) multi-layer EPI technology to significantly reduce conduction losses and improve switching performance. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ (VGS=10V), and it can handle a drain current of 20A. This MOSFET is suitable for high-voltage, high-efficiency switching power supplies and other applications requiring high energy efficiency and high current density, especially in power conversion, industrial control and motor drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. Detailed parameter description of IPA50R299CP-VB

1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
7. **Drain current (ID)**: 20A
8. **Technology**: Super Junction (SJ) multi-layer EPI technology
9. **Maximum pulse current**: 40A
10. **Power consumption**: 83W
11. **Operating temperature range**: -55°C to +150°C
12. **Package pin layout**: The three-pin design of TO220F provides good heat dissipation performance.

Domain and module applications:

3. Application fields and module examples

1. **Switching power supply (SMPS)**:
IPA50R299CP-VB is suitable for the design of high-efficiency switching power supplies, especially high-voltage power converters used in industry, communication equipment and consumer electronics. Its high drain-source voltage of 650V makes it suitable for AC-DC and DC-DC converters, capable of operating under high voltage input conditions and providing efficient energy conversion.

2. **Industrial automation equipment**:
Due to its high current handling capability and high voltage tolerance, IPA50R299CP-VB is very suitable for motor control, motor drive and industrial power management systems in industrial automation systems. This device can operate at high current density and high switching frequency, reducing energy loss in the system and improving control efficiency.

3. **Photovoltaic inverter**:
In photovoltaic (solar) inverters, IPA50R299CP-VB is able to handle high voltages and efficiently convert DC power to AC power. Its efficient switching performance and low losses make it an ideal choice for inverter designs in the renewable energy sector.

4. **Motor Drive and Control Systems**:
The IPA50R299CP-VB can be used in high-voltage drive circuits for motors, especially in industrial motor control applications that require high precision and high efficiency. This MOSFET can switch quickly, which improves the motor's response speed and reduces power consumption.

5. **Household Appliances**:
It is also suitable for power control modules in high-voltage household appliances, such as air conditioners, refrigerators and other high-power devices. Due to its high efficiency and high-voltage resistance, this MOSFET can effectively reduce the energy consumption of the equipment and improve the overall performance.

With its high-voltage and high-efficiency design features, the IPA50R299CP-VB is widely used in power conversion, industrial control, photovoltaics and motor drives, and is an ideal choice for high reliability and high performance occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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