Featured Model

IPA50R199CP-VB Product details

Product introduction:

IPA50R199CP-VB Product Introduction

The IPA50R199CP-VB is a high-voltage N-Channel MOSFET in TO220F package, designed for high-voltage applications. With a maximum drain-source voltage of 650V, this MOSFET has excellent voltage resistance and low conduction loss, making it suitable for use in high-efficiency power conversion and power management systems. Using SJ_Multi-EPI (super junction multi-layer epitaxy) technology, the IPA50R199CP-VB achieves lower on-resistance and higher current carrying capacity, making it an ideal choice for high-voltage power systems in industrial and consumer electronics.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
IPA50R199CP-VB Detailed parameter description

- **Model**: IPA50R199CP-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI (Superjunction Multilayer Epitaxy)

Domain and module applications:

Applications and module examples: 1. Switching Power Supply (SMPS): IPA50R199CP-VB is ideal for high voltage switching power supplies such as LED drivers, adapters, and server power supplies. Its high drain-source voltage (650V) allows it to operate with high stability in high voltage environments, providing efficient power conversion and reducing energy loss. 2. Power Inverter: This MOSFET plays an important role in applications such as photovoltaic inverters and wind inverters. Its SJ_Multi-EPI technology ensures low conduction losses under high power conditions and improves energy efficiency, making it an ideal device for renewable energy systems to help convert and transmit high voltage currents. 3. Industrial Automation Equipment: IPA50R199CP-VB is also widely used in industrial automation, especially in motor drive control and industrial power management. Its high withstand voltage capability and low on-resistance characteristics enable it to provide stable and efficient switching control in high current applications, improving the performance and durability of the equipment.

4. **Power Inverter and Power Conditioning**:
In power inverter and power conditioning modules, IPA50R199CP-VB can be used to improve conversion efficiency and reduce heat generation, especially in situations where high voltage and high power need to be handled, such as power tools and large household appliances.

With SJ_Multi-EPI technology and high withstand voltage characteristics, IPA50R199CP-VB is suitable for multiple high voltage, high efficiency power conversion application scenarios, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat