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IPA126N10N3 G-VB Product details
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Product Introduction
**IPA126N10N3 G-VB** is a high-performance N-type MOSFET in TO220F package. This MOSFET adopts Trench technology and is designed for high voltage and high current applications. It has a drain-source voltage of 100V and a drain current capability of up to 90A. Its low on-resistance enables it to provide excellent performance and efficiency in a variety of high-power applications, and is very suitable for power management systems that require high current handling and low power consumption.
**IPA126N10N3 G-VB** is a high-performance N-type MOSFET in TO220F package. This MOSFET adopts Trench technology and is designed for high voltage and high current applications. It has a drain-source voltage of 100V and a drain current capability of up to 90A. Its low on-resistance enables it to provide excellent performance and efficiency in a variety of high-power applications, and is very suitable for power management systems that require high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **High-power switching power supply**: The IPA126N10N3 G-VB is particularly suitable for high-power switching power supplies such as DC-DC converters and AC-DC adapters due to its high withstand voltage and low on-resistance. This MOSFET can efficiently manage the switching operation of the power supply, improve system efficiency, and reduce power consumption.
2. **Motor drive system**: In motor drive applications, the IPA126N10N3 G-VB can effectively handle high current loads. Its high current carrying capacity and low RDS(ON) can provide stable current control, suitable for drive systems for DC motors, stepper motors and servo motors.
3. **Power amplifier**: This MOSFET performs well in power amplifier applications, especially in situations with high power and high voltage requirements. The high current handling capability and low power consumption characteristics of the IPA126N10N3 G-VB make it suitable for devices such as audio amplifiers and RF power amplifiers.
4. **Power Management Module**: IPA126N10N3 G-VB is an ideal choice for power management modules, especially in applications that need to handle high current and high voltage. It can effectively manage current and voltage, improve the overall efficiency and stability of the system, and is suitable for power switches, overcurrent protection and power management modules.
5. **LED Drive Circuit**: In high-power LED drive applications, IPA126N10N3 G-VB can stably control the switching and brightness of LEDs. Its low on-resistance and high current capability enable it to work efficiently in high-power LED lamps and lighting systems, improving system performance and reliability.
1. **High-power switching power supply**: The IPA126N10N3 G-VB is particularly suitable for high-power switching power supplies such as DC-DC converters and AC-DC adapters due to its high withstand voltage and low on-resistance. This MOSFET can efficiently manage the switching operation of the power supply, improve system efficiency, and reduce power consumption.
2. **Motor drive system**: In motor drive applications, the IPA126N10N3 G-VB can effectively handle high current loads. Its high current carrying capacity and low RDS(ON) can provide stable current control, suitable for drive systems for DC motors, stepper motors and servo motors.
3. **Power amplifier**: This MOSFET performs well in power amplifier applications, especially in situations with high power and high voltage requirements. The high current handling capability and low power consumption characteristics of the IPA126N10N3 G-VB make it suitable for devices such as audio amplifiers and RF power amplifiers.
4. **Power Management Module**: IPA126N10N3 G-VB is an ideal choice for power management modules, especially in applications that need to handle high current and high voltage. It can effectively manage current and voltage, improve the overall efficiency and stability of the system, and is suitable for power switches, overcurrent protection and power management modules.
5. **LED Drive Circuit**: In high-power LED drive applications, IPA126N10N3 G-VB can stably control the switching and brightness of LEDs. Its low on-resistance and high current capability enable it to work efficiently in high-power LED lamps and lighting systems, improving system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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