IPA100N08N3 G-VB Product details
Product introduction:
IPA100N08N3 G-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. It has a maximum drain-source voltage of 100V, a drain current of 90A, and uses Trench technology to ensure excellent switching performance and low on-resistance. This MOSFET is particularly suitable for applications that require efficient switching and current control, such as power management and power conversion.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications:
1. **Power management**: IPA100N08N3 G-VB is used for high voltage and high current switch control in power management systems. Its low on-resistance and high current handling capability make it an ideal choice for power converters and power distribution systems, which can effectively improve the overall efficiency and stability of the system.
2. **Power conversion**: In DC-DC converters, IPA100N08N3 G-VB can be used as a high-side switch or a low-side switch. Its excellent switching performance and low on-resistance help reduce power consumption, improve conversion efficiency, and ensure the reliability of the converter under high loads.
3. **Motor drive**: In motor drive applications, IPA100N08N3 G-VB can be used to control the start and stop of the motor, as well as to regulate the running state of the motor. Its high current capability and low on-resistance enable it to effectively handle the high current requirements in motor drives.
4. **Battery Management**: In battery management systems, the IPA100N08N3 G-VB can be used for battery switch control and protection functions. Its high current handling capability and low on-resistance enable it to effectively manage the battery charge and discharge process and extend battery life.
5. **Automotive Electronics**: In automotive electronic systems, the IPA100N08N3 G-VB is suitable for switch control of high-power loads. Its reliability and high current capability make it suitable for automotive power distribution systems, electric windows and seat adjustment systems, etc.
In summary, the IPA100N08N3 G-VB is a high-performance N-channel MOSFET suitable for high-voltage and high-current applications such as power management, power conversion, motor drive, battery management, and automotive electronics. Its excellent switching performance and low on-resistance enable it to perform well in these fields.
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