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IPA083N10NM5S-VB Product details
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Product Introduction:
IPA083N10NM5S-VB is a high-performance single N-channel MOSFET packaged in TO220F. This MOSFET is designed for high-voltage, high-current switching applications, with a drain-source breakdown voltage of 100V and a maximum drain current of 120A. Its low on-resistance (3.7mΩ@VGS=10V) and the Trench technology used make it particularly suitable for high-efficiency power management and load switching applications.
IPA083N10NM5S-VB is a high-performance single N-channel MOSFET packaged in TO220F. This MOSFET is designed for high-voltage, high-current switching applications, with a drain-source breakdown voltage of 100V and a maximum drain current of 120A. Its low on-resistance (3.7mΩ@VGS=10V) and the Trench technology used make it particularly suitable for high-efficiency power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter description:
- **Model**: IPA083N10NM5S-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.7mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: IPA083N10NM5S-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.7mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **High-power DC-DC converters**:
The low on-resistance and high current capability of the IPA083N10NM5S-VB make it ideal for use as a switching element in high-power DC-DC converters. In this application, it is able to handle larger currents while keeping power losses low, improving the overall efficiency and stability of the system.
2. **Electric vehicle drive systems**:
In electric vehicles, this MOSFET can be used in motor drive circuits and battery management systems. Its high current handling capability and low on-resistance help optimize the power transmission efficiency and battery usage efficiency of electric vehicles.
3. **Power management system**:
The IPA083N10NM5S-VB can be widely used in various power management systems, such as computer power supplies and server power modules. It can effectively manage the switching of power supplies to ensure the stability and efficiency of the power system.
4. **Industrial Power Supply**:
In industrial applications, this MOSFET can be used as a switching element for high-power power supplies. Its superior current carrying capacity and low power consumption make it suitable for industrial power modules that require high reliability and stability.
5. **High-efficiency Switching Power Supply**:
In high-efficiency switching power supply designs, IPA083N10NM5S-VB can provide stable switching performance to ensure reliable operation of the power module under high load conditions. Its low on-resistance characteristics help reduce power loss and improve power conversion efficiency.
The high current handling capability and low on-resistance of IPA083N10NM5S-VB make it perform well in high-power applications, especially for scenarios that require high efficiency and high reliability.
1. **High-power DC-DC converters**:
The low on-resistance and high current capability of the IPA083N10NM5S-VB make it ideal for use as a switching element in high-power DC-DC converters. In this application, it is able to handle larger currents while keeping power losses low, improving the overall efficiency and stability of the system.
2. **Electric vehicle drive systems**:
In electric vehicles, this MOSFET can be used in motor drive circuits and battery management systems. Its high current handling capability and low on-resistance help optimize the power transmission efficiency and battery usage efficiency of electric vehicles.
3. **Power management system**:
The IPA083N10NM5S-VB can be widely used in various power management systems, such as computer power supplies and server power modules. It can effectively manage the switching of power supplies to ensure the stability and efficiency of the power system.
4. **Industrial Power Supply**:
In industrial applications, this MOSFET can be used as a switching element for high-power power supplies. Its superior current carrying capacity and low power consumption make it suitable for industrial power modules that require high reliability and stability.
5. **High-efficiency Switching Power Supply**:
In high-efficiency switching power supply designs, IPA083N10NM5S-VB can provide stable switching performance to ensure reliable operation of the power module under high load conditions. Its low on-resistance characteristics help reduce power loss and improve power conversion efficiency.
The high current handling capability and low on-resistance of IPA083N10NM5S-VB make it perform well in high-power applications, especially for scenarios that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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