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IPA057N06N3-G-VB Product details
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IPA057N06N3-G-VB Product Introduction
IPA057N06N3-G-VB is a high-performance N-channel MOSFET in TO220F package. It has high current carrying capability and low on-resistance, and is designed for high-efficiency switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 120A. Its threshold voltage (Vth) is 3V, which can provide excellent conductivity under different gate-source voltages. IPA057N06N3-G-VB uses Trench technology to optimize switching efficiency and reduce power consumption, and is suitable for a variety of electronic applications requiring high current and low power consumption.
IPA057N06N3-G-VB is a high-performance N-channel MOSFET in TO220F package. It has high current carrying capability and low on-resistance, and is designed for high-efficiency switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 120A. Its threshold voltage (Vth) is 3V, which can provide excellent conductivity under different gate-source voltages. IPA057N06N3-G-VB uses Trench technology to optimize switching efficiency and reduce power consumption, and is suitable for a variety of electronic applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
IPA057N06N3-G-VB parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules of IPA057N06N3-G-VB
1. **DC-DC converter**: The low on-resistance and high current handling capability of IPA057N06N3-G-VB make it very suitable for use in DC-DC converters. It can improve power conversion efficiency and reduce energy loss, especially in applications requiring high current output, such as power management and voltage regulation modules.
2. **Power switch**: In power switching applications, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice. It can provide stable and reliable performance in switching circuits, especially in applications requiring high switching frequency and low conduction loss, such as switching power supplies and power management systems.
3. **Motor drive**: IPA057N06N3-G-VB is also suitable for motor drive circuits. In motor control, it can act as an efficient switching element, provide reliable current control, and help optimize the performance and energy efficiency of the motor, especially in drive applications with high current loads.
4. **LED driver**: In the LED driver circuit, this MOSFET can efficiently control the switching of LEDs, provide stable current, and reduce power consumption. It is suitable for use in high-brightness LED lighting systems and high-power LED modules to help achieve efficient light source control and thermal management.
5. **Power amplifier**: IPA057N06N3-G-VB can be used in power amplifier circuits to achieve efficient signal amplification and processing with its low on-resistance and high current handling capability. It is suitable for applications that require high switching speeds and high power output, such as audio amplifiers and RF amplifiers.
1. **DC-DC converter**: The low on-resistance and high current handling capability of IPA057N06N3-G-VB make it very suitable for use in DC-DC converters. It can improve power conversion efficiency and reduce energy loss, especially in applications requiring high current output, such as power management and voltage regulation modules.
2. **Power switch**: In power switching applications, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice. It can provide stable and reliable performance in switching circuits, especially in applications requiring high switching frequency and low conduction loss, such as switching power supplies and power management systems.
3. **Motor drive**: IPA057N06N3-G-VB is also suitable for motor drive circuits. In motor control, it can act as an efficient switching element, provide reliable current control, and help optimize the performance and energy efficiency of the motor, especially in drive applications with high current loads.
4. **LED driver**: In the LED driver circuit, this MOSFET can efficiently control the switching of LEDs, provide stable current, and reduce power consumption. It is suitable for use in high-brightness LED lighting systems and high-power LED modules to help achieve efficient light source control and thermal management.
5. **Power amplifier**: IPA057N06N3-G-VB can be used in power amplifier circuits to achieve efficient signal amplification and processing with its low on-resistance and high current handling capability. It is suitable for applications that require high switching speeds and high power output, such as audio amplifiers and RF amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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