IPA057N06N3 G-VB Product details
Product introduction:
IPA057N06N3-G-VB is a high-performance N-channel MOSFET packaged in TO220F. This MOSFET has excellent current handling capability and low on-resistance, and is suitable for power management applications that require high performance and high reliability. Its drain-source voltage (VDS) is 60V, gate-source voltage (VGS) is ±20V, and gate threshold voltage (Vth) is 3V, making it suitable for use in various power conversion and switching applications. Using Trench technology, IPA057N06N3-G-VB can still maintain a low on-resistance under high current conditions, improving switching efficiency and overall system power density.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter | Description |
|-----------------------------|-------------------------------------------|
| **Package type** | TO220F |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 13mΩ (@VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 5mΩ (@VGS = 10V) |
| **Maximum drain current (ID)** | 120A |
| **Technology** | Trench |
| **Power consumption** | High current handling capability and low on-resistance |
| **Switching speed** | High efficiency for fast switching applications |
| **Typical applications** | Power management, electric vehicles, motor control, switching circuits |
Domain and module applications:
1. **Power management system**
In power management systems, the high current handling capability and low on-resistance of IPA057N06N3-G-VB make it very suitable for DC-DC converters and power switches. It can significantly improve power conversion efficiency, reduce power consumption, and ensure stable system operation.
2. **Electric vehicles**
For battery management systems and drive systems of electric vehicles, the high current capability and low on-resistance of this MOSFET enable it to effectively handle the high power requirements of electric vehicles. It helps optimize battery performance and motor control, improving the overall efficiency of the vehicle.
3. **Motor control**
In motor control applications, such as inverters and drives, IPA057N06N3-G-VB provides precise current control and efficient switching performance. Its low on-resistance and high current capability ensure the stability and efficiency of the motor drive system.
4. **Switching Circuit**
In various switching circuits, such as power switching and signal conditioning, the efficient switching characteristics of IPA057N06N3-G-VB can improve the performance of the circuit. It is suitable for applications that require fast switching and low power consumption, improving the response speed and energy efficiency of the system.
Technical support:
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