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IPA057N06N3 G-VB Product details

Product introduction:

1. IPA057N06N3-G-VB Product Introduction

IPA057N06N3-G-VB is a high-performance N-channel MOSFET packaged in TO220F. This MOSFET has excellent current handling capability and low on-resistance, and is suitable for power management applications that require high performance and high reliability. Its drain-source voltage (VDS) is 60V, gate-source voltage (VGS) is ±20V, and gate threshold voltage (Vth) is 3V, making it suitable for use in various power conversion and switching applications. Using Trench technology, IPA057N06N3-G-VB can still maintain a low on-resistance under high current conditions, improving switching efficiency and overall system power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. Detailed parameter description of IPA057N06N3-G-VB

| Parameter | Description |
|-----------------------------|-------------------------------------------|
| **Package type** | TO220F |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 13mΩ (@VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 5mΩ (@VGS = 10V) |
| **Maximum drain current (ID)** | 120A |
| **Technology** | Trench |
| **Power consumption** | High current handling capability and low on-resistance |
| **Switching speed** | High efficiency for fast switching applications |
| **Typical applications** | Power management, electric vehicles, motor control, switching circuits |

Domain and module applications:

3. Application fields and module examples

1. **Power management system**
In power management systems, the high current handling capability and low on-resistance of IPA057N06N3-G-VB make it very suitable for DC-DC converters and power switches. It can significantly improve power conversion efficiency, reduce power consumption, and ensure stable system operation.

2. **Electric vehicles**
For battery management systems and drive systems of electric vehicles, the high current capability and low on-resistance of this MOSFET enable it to effectively handle the high power requirements of electric vehicles. It helps optimize battery performance and motor control, improving the overall efficiency of the vehicle.

3. **Motor control**
In motor control applications, such as inverters and drives, IPA057N06N3-G-VB provides precise current control and efficient switching performance. Its low on-resistance and high current capability ensure the stability and efficiency of the motor drive system.

4. **Switching Circuit**
In various switching circuits, such as power switching and signal conditioning, the efficient switching characteristics of IPA057N06N3-G-VB can improve the performance of the circuit. It is suitable for applications that require fast switching and low power consumption, improving the response speed and energy efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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