IPA045N10N3 G-VB Product details
Product introduction:
IPA045N10N3 G-VB is a high-performance N-channel MOSFET with a TO220F package type, designed for high current and high efficiency applications. It uses Trench technology, has extremely low on-resistance and excellent switching performance, and is suitable for working in high voltage environments. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 3.7mΩ@VGS=10V, and the maximum drain current is 120A. Its excellent electrical performance enables it to perform well in power management, high-power switching, and motor control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation (Ptot)**: 125W
Domain and module applications:
1. **Power management**
The low on-resistance and high current capability of the IPA045N10N3 G-VB make it ideal for use in power management systems. In DC-DC converters and power regulation modules, this MOSFET is able to effectively handle high current loads, providing stable power output while reducing power consumption and heat generation.
2. **High power switching**
In applications that require high power switching, such as inverters and high power load switching, the IPA045N10N3 G-VB is able to withstand high voltage and high current conditions and provide reliable switching performance. Its low on-resistance means less energy loss and heat generation, improving the overall efficiency of the system.
3. **Motor drive**
In motor control modules, the IPA045N10N3 G-VB is able to handle larger current loads and is suitable for high power motor drive applications. Its high current carrying capacity and excellent switching characteristics enable it to provide stable and efficient motor control, ensuring reliable operation of the equipment.
4. **Industrial Equipment**
IPA045N10N3 G-VB is also suitable for high current switching and regulation applications in various industrial equipment. Its high current handling capability and low on-resistance enable it to play a key role in industrial power and control systems, improving system performance and stability.
With its excellent electrical characteristics and high current handling capability, IPA045N10N3 G-VB provides excellent support in the fields of power management, high power switching, motor drive and industrial equipment, helping to achieve efficient and stable system operation.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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