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IPA030N10N3 G-VB Product details
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Product Introduction: IPA030N10N3 G-VB
IPA030N10N3 G-VB is a high-performance N-channel MOSFET in TO220F package. It is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a gate drive voltage (VGS) of ±20V. The MOSFET has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 3.7mΩ at VGS=10V, and a maximum drain current (ID) of 120A. Using Trench technology, the IPA030N10N3 G-VB provides superior electrical performance and high efficiency for demanding power conversion and switching applications.
IPA030N10N3 G-VB is a high-performance N-channel MOSFET in TO220F package. It is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a gate drive voltage (VGS) of ±20V. The MOSFET has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 3.7mΩ at VGS=10V, and a maximum drain current (ID) of 120A. Using Trench technology, the IPA030N10N3 G-VB provides superior electrical performance and high efficiency for demanding power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3.7mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 120A
8. **Technology type**: Trench technology
9. **Maximum power consumption**: 200W
10. **Gate charge (Qg)**: 110nC
11. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3.7mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 120A
8. **Technology type**: Trench technology
9. **Maximum power consumption**: 200W
10. **Gate charge (Qg)**: 110nC
11. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples:
1. **High-power switching applications**: The IPA030N10N3 G-VB is suitable for high-power switching applications such as power converters and motor drives. Its low on-resistance and high current carrying capacity make it excel under high load conditions, effectively reducing power consumption and heat generation.
2. **DC-DC converter**: In a DC-DC converter, this MOSFET can be used as the main switching element for voltage conversion. Its high current capacity and low on-resistance ensure high efficiency and stability of the converter, making it ideal for high-current and high-efficiency power modules.
3. **Electric Vehicles (EV)**: In electric vehicles, the IPA030N10N3 G-VB can be used in battery management systems and motor control modules. Its high voltage and high current characteristics make it suitable for handling the high power requirements of electric vehicles, enhancing system reliability and performance.
4. **Industrial Power Systems**: This MOSFET can be used as a switching element in industrial power systems, such as power adapters and power management modules. Its high voltage and high current capabilities enable it to cope with the harsh environments in industrial applications and provide a stable power supply.
5. **Solar Inverters**: In solar inverters, the IPA030N10N3 G-VB acts as a switching element for efficient power conversion, suitable for handling the high power demands in solar systems. Its low on-resistance and high current capability help improve the overall efficiency and reliability of the inverter.
The high current handling capability and low on-resistance of the IPA030N10N3 G-VB enable it to excel in high-power and high-efficiency power conversion applications, and is suitable for a variety of demanding power electronics systems.
1. **High-power switching applications**: The IPA030N10N3 G-VB is suitable for high-power switching applications such as power converters and motor drives. Its low on-resistance and high current carrying capacity make it excel under high load conditions, effectively reducing power consumption and heat generation.
2. **DC-DC converter**: In a DC-DC converter, this MOSFET can be used as the main switching element for voltage conversion. Its high current capacity and low on-resistance ensure high efficiency and stability of the converter, making it ideal for high-current and high-efficiency power modules.
3. **Electric Vehicles (EV)**: In electric vehicles, the IPA030N10N3 G-VB can be used in battery management systems and motor control modules. Its high voltage and high current characteristics make it suitable for handling the high power requirements of electric vehicles, enhancing system reliability and performance.
4. **Industrial Power Systems**: This MOSFET can be used as a switching element in industrial power systems, such as power adapters and power management modules. Its high voltage and high current capabilities enable it to cope with the harsh environments in industrial applications and provide a stable power supply.
5. **Solar Inverters**: In solar inverters, the IPA030N10N3 G-VB acts as a switching element for efficient power conversion, suitable for handling the high power demands in solar systems. Its low on-resistance and high current capability help improve the overall efficiency and reliability of the inverter.
The high current handling capability and low on-resistance of the IPA030N10N3 G-VB enable it to excel in high-power and high-efficiency power conversion applications, and is suitable for a variety of demanding power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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