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IPA028N08N3 G-VB Product details
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Product Introduction
**IPA028N08N3 G-VB** is a high-performance N-type MOSFET in TO220F package. This MOSFET adopts advanced Trench technology and is designed for high current and low on-resistance applications. It can work stably at a drain-source voltage of 80V. Its excellent switching performance and low on-resistance make it very suitable for high power and high efficiency power management and switching applications.
**IPA028N08N3 G-VB** is a high-performance N-type MOSFET in TO220F package. This MOSFET adopts advanced Trench technology and is designed for high current and low on-resistance applications. It can work stably at a drain-source voltage of 80V. Its excellent switching performance and low on-resistance make it very suitable for high power and high efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power converter**: The IPA028N08N3 G-VB is particularly suitable for high-efficiency power converters such as DC-DC converters and AC-DC adapters due to its low on-resistance and high current handling capability. Its high switching efficiency and low power consumption can significantly improve the overall efficiency and stability of the power system.
2. **Motor drive**: In motor drive applications, this MOSFET can provide stable current control and efficient switching operation. The high current carrying capacity and low RDS(ON) of the IPA028N08N3 G-VB make it very suitable for various motor control systems such as DC motor drive and stepper motor control.
3. **Power amplifier**: Due to its high withstand voltage and low on-resistance, the IPA028N08N3 G-VB is an ideal choice for power amplifier applications. It can work stably under high power loads, improve the efficiency and performance of the amplifier, and is suitable for audio amplifiers and RF power amplifiers.
4. **Power Management Module**: This MOSFET performs well in various power management modules, especially those that need to handle high currents. It can efficiently manage current and voltage to ensure the efficiency and stability of power systems, such as power switches, overcurrent protection, and power management modules.
5. **LED Drive Circuit**: In LED drive applications, IPA028N08N3 G-VB can effectively control the switching and brightness of LEDs. Its low on-resistance reduces power loss and improves the efficiency of LED drive systems, making it suitable for high-power LED lamps and lighting systems.
1. **High-efficiency power converter**: The IPA028N08N3 G-VB is particularly suitable for high-efficiency power converters such as DC-DC converters and AC-DC adapters due to its low on-resistance and high current handling capability. Its high switching efficiency and low power consumption can significantly improve the overall efficiency and stability of the power system.
2. **Motor drive**: In motor drive applications, this MOSFET can provide stable current control and efficient switching operation. The high current carrying capacity and low RDS(ON) of the IPA028N08N3 G-VB make it very suitable for various motor control systems such as DC motor drive and stepper motor control.
3. **Power amplifier**: Due to its high withstand voltage and low on-resistance, the IPA028N08N3 G-VB is an ideal choice for power amplifier applications. It can work stably under high power loads, improve the efficiency and performance of the amplifier, and is suitable for audio amplifiers and RF power amplifiers.
4. **Power Management Module**: This MOSFET performs well in various power management modules, especially those that need to handle high currents. It can efficiently manage current and voltage to ensure the efficiency and stability of power systems, such as power switches, overcurrent protection, and power management modules.
5. **LED Drive Circuit**: In LED drive applications, IPA028N08N3 G-VB can effectively control the switching and brightness of LEDs. Its low on-resistance reduces power loss and improves the efficiency of LED drive systems, making it suitable for high-power LED lamps and lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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