IM5201G-VB Product details
Product introduction:
IM5201G-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is 40V, gate-source voltage (VGS) is ±20V, and gate threshold voltage (Vth) is 2.5V. Using Trench technology, IM5201G-VB provides excellent conduction performance, with an on-resistance (RDS(ON)) of 12mΩ at VGS=10V and a maximum drain current (ID) of 55A. These features make IM5201G-VB perform well in applications that require high current handling and low conduction losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench technology
- **Power dissipation**: 45W
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: Approximately 1800 pF
- **Switching speed**: Medium
Domain and module applications:
The excellent performance of IM5201G-VB makes it suitable for multiple fields and modules, including:
1. **DC-DC Converter**: In DC-DC converter, IM5201G-VB can provide efficient switching performance and low on-resistance, which is essential for improving conversion efficiency and reducing power loss. It is suitable for high power density converter design, such as portable electronic devices and communication equipment.
2. **Power Management**: In power management module, IM5201G-VB can effectively control current and voltage as a switching element to optimize the stability and efficiency of power supply. For example, it plays an important role in computer power supply, consumer electronics and industrial power supply.
3. **Motor Drive**: IM5201G-VB is suitable for motor drive circuits, especially for occasions requiring high current and low conduction loss. Its high current handling capability makes it very suitable for use in power tools, fan control and other motor control applications.
4. **Power Switch**: This MOSFET can also be used in power switch applications such as relay replacement and high power switch control. Its low on-resistance ensures efficient switching operation and thermal management, suitable for use in power conversion and power control systems.
5. **Battery Management System**: In battery management systems, the IM5201G-VB can be used for battery protection and charging control. Its low on-resistance and high current handling capability ensure system stability and efficiency, suitable for management systems of lithium-ion batteries and other high-capacity batteries.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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