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IM2512G-VB Product details
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Product Introduction: IM2512G-VB
IM2512G-VB is a high-performance P-channel MOSFET in SOT23-6 package. It is designed for low voltage applications with a maximum drain-source voltage (VDS) of -30V and a gate drive voltage (VGS) of ±20V. IM2512G-VB has a threshold voltage (Vth) of -1.7V, an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and a maximum drain current (ID) of -4.8A. This MOSFET uses Trench technology, providing excellent electrical performance and high efficiency, and is suitable for various low voltage power management applications.
IM2512G-VB is a high-performance P-channel MOSFET in SOT23-6 package. It is designed for low voltage applications with a maximum drain-source voltage (VDS) of -30V and a gate drive voltage (VGS) of ±20V. IM2512G-VB has a threshold voltage (Vth) of -1.7V, an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and a maximum drain current (ID) of -4.8A. This MOSFET uses Trench technology, providing excellent electrical performance and high efficiency, and is suitable for various low voltage power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
1. **Package type**: SOT23-6
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -4.8A
8. **Technology type**: Trench technology
9. **Maximum power consumption**: 1.25W
10. **Gate charge (Qg)**: 16nC
11. **Operating temperature range**: -55°C to 150°C
1. **Package type**: SOT23-6
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -4.8A
8. **Technology type**: Trench technology
9. **Maximum power consumption**: 1.25W
10. **Gate charge (Qg)**: 16nC
11. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples:
1. **Portable Electronics**: The IM2512G-VB is suitable for power management modules in portable electronic devices such as smartphones, tablets, and portable battery-powered devices. Its small package and low on-resistance help improve system efficiency and save space.
2. **Battery Management System**: In battery management systems, this MOSFET can be used as a switching element to control the charging and discharging process. Its low on-resistance can effectively reduce power consumption and improve the overall performance of the battery system.
3. **DC-DC Converter**: The IM2512G-VB is suitable for low-voltage DC-DC converters as an efficient switching element for power conversion. Its high efficiency and small package make it ideal for compact power modules.
4. **Low-power Switching Applications**: This MOSFET can be used in a variety of low-power switching applications such as sensors and small drive circuits. Its high efficiency and small package help design more compact and energy-efficient circuits.
5. **Automation control system**: In the automation control system, IM2512G-VB can be used as a switching element for load switching and signal conditioning. Its stable performance and low power consumption can effectively improve the overall reliability and efficiency of the system.
The low voltage and high efficiency characteristics of IM2512G-VB make it play an important role in modern electronic design, especially in applications with limited space and low power consumption requirements.
1. **Portable Electronics**: The IM2512G-VB is suitable for power management modules in portable electronic devices such as smartphones, tablets, and portable battery-powered devices. Its small package and low on-resistance help improve system efficiency and save space.
2. **Battery Management System**: In battery management systems, this MOSFET can be used as a switching element to control the charging and discharging process. Its low on-resistance can effectively reduce power consumption and improve the overall performance of the battery system.
3. **DC-DC Converter**: The IM2512G-VB is suitable for low-voltage DC-DC converters as an efficient switching element for power conversion. Its high efficiency and small package make it ideal for compact power modules.
4. **Low-power Switching Applications**: This MOSFET can be used in a variety of low-power switching applications such as sensors and small drive circuits. Its high efficiency and small package help design more compact and energy-efficient circuits.
5. **Automation control system**: In the automation control system, IM2512G-VB can be used as a switching element for load switching and signal conditioning. Its stable performance and low power consumption can effectively improve the overall reliability and efficiency of the system.
The low voltage and high efficiency characteristics of IM2512G-VB make it play an important role in modern electronic design, especially in applications with limited space and low power consumption requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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