I9N50-VB Product details
Product introduction:
I9N50-VB is a single N-channel MOSFET in TO251 package with a high drain-source breakdown voltage of 650V and a maximum drain current of 7A. The device adopts advanced super junction multi-epitaxial (SJ_Multi-EPI) technology, has a low on-resistance (700mΩ@VGS=10V), can provide efficient current control and switching characteristics, and is very suitable for high-voltage power management and industrial applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: I9N50-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications:
1. **High-voltage power management**: The 650V high-voltage capability of the I9N50-VB makes it ideal for high-voltage power modules and systems, such as AC-DC and DC-DC converters, switch mode power supplies (SMPS), etc. Its low on-resistance and high-voltage characteristics help reduce power losses during power conversion and improve overall conversion efficiency.
2. **Motor control and drive**: The high-voltage handling capability of the device makes it suitable for high-voltage applications in industrial motor drives, such as high-power industrial motor drives and inverters. In these applications, the I9N50-VB ensures efficient switching control during motor startup and operation.
3. **Industrial automation equipment**: In high-voltage industrial control equipment, this MOSFET can be used in modules such as power distribution, load switching, and industrial control circuits. Its voltage resistance and high current handling capabilities enable it to work stably in harsh industrial environments and provide reliable power management.
4. **Lighting systems**: In applications such as high-voltage LED lighting drivers and ballasts, the I9N50-VB can be used to effectively control current and voltage, ensuring stable operation and efficient energy conversion of lighting systems.
5. **Renewable energy systems**: The I9N50-VB also has potential for application in photovoltaic inverters and wind power generation systems. Its high voltage withstand characteristics can handle the high-voltage currents generated by photovoltaic panels and wind turbines, helping to achieve efficient energy conversion and current control.
With its excellent high-voltage handling capabilities and efficient switching performance, the I9N50-VB is suitable for high-voltage applications such as power management, industrial automation, and motor drives.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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