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I8N25-VB Product details
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1. I8N25-VB Product Introduction
I8N25-VB is a single N-channel power MOSFET in TO251 package, suitable for high voltage applications, with a drain-source voltage (VDS) of 200V, and uses advanced Trench technology to provide better conduction performance. Its gate-source voltage (VGS) is ±20V, the gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 270mΩ at VGS=10V, and the maximum drain current (ID) is 8A. This MOSFET is suitable for a variety of switching circuits and high voltage control scenarios.
I8N25-VB is a single N-channel power MOSFET in TO251 package, suitable for high voltage applications, with a drain-source voltage (VDS) of 200V, and uses advanced Trench technology to provide better conduction performance. Its gate-source voltage (VGS) is ±20V, the gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 270mΩ at VGS=10V, and the maximum drain current (ID) is 8A. This MOSFET is suitable for a variety of switching circuits and high voltage control scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of I8N25-VB
- **Package type**: TO251
- **Channel type**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8A
- **Technology type**: Trench technology
- **Power dissipation**: 50W
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: Approximately 500 pF
- **Switching speed**: Medium
- **Package type**: TO251
- **Channel type**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8A
- **Technology type**: Trench technology
- **Power dissipation**: 50W
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: Approximately 500 pF
- **Switching speed**: Medium
Domain and module applications：
3. I8N25-VB Application Fields and Modules
The I8N25-VB MOSFET is suitable for the following fields and modules with its high voltage and medium current handling capabilities:
1. **Lighting Control Circuit**: The I8N25-VB is very suitable for high-voltage drive circuits in LED lighting systems. Its high withstand voltage of 200V and low conduction loss ensure stability and efficiency at higher operating voltages, especially in industrial lighting and street light control systems that require high reliability.
2. **Inverters and Converters**: In power inverters and DC-DC converters, the high withstand voltage characteristics of the I8N25-VB make it suitable for handling high-voltage inputs and can efficiently convert energy, and is used in inverter modules in new energy equipment and industrial control equipment.
3. **Motor Control and Drive**: The device is suitable for small motor drive applications, especially those that require high-voltage drive. The I8N25-VB can provide low-loss switching performance in these applications and help improve the energy efficiency and reliability of the system.
4. **High-voltage switching power supply (SMPS)**: The I8N25-VB can be used in high-voltage switching power supplies, especially in power modules for industrial and communication equipment. Its high voltage withstand capability and medium current handling capability ensure that MOSFET can play an efficient power conversion role in switching power supplies.
5. **Battery management system**: The I8N25-VB is suitable for the protection circuit in the battery management system, which can prevent the battery from overvoltage or overcurrent during the charging and discharging process, ensuring the safety of equipment operation and the long life of the battery.
The I8N25-VB MOSFET is suitable for the following fields and modules with its high voltage and medium current handling capabilities:
1. **Lighting Control Circuit**: The I8N25-VB is very suitable for high-voltage drive circuits in LED lighting systems. Its high withstand voltage of 200V and low conduction loss ensure stability and efficiency at higher operating voltages, especially in industrial lighting and street light control systems that require high reliability.
2. **Inverters and Converters**: In power inverters and DC-DC converters, the high withstand voltage characteristics of the I8N25-VB make it suitable for handling high-voltage inputs and can efficiently convert energy, and is used in inverter modules in new energy equipment and industrial control equipment.
3. **Motor Control and Drive**: The device is suitable for small motor drive applications, especially those that require high-voltage drive. The I8N25-VB can provide low-loss switching performance in these applications and help improve the energy efficiency and reliability of the system.
4. **High-voltage switching power supply (SMPS)**: The I8N25-VB can be used in high-voltage switching power supplies, especially in power modules for industrial and communication equipment. Its high voltage withstand capability and medium current handling capability ensure that MOSFET can play an efficient power conversion role in switching power supplies.
5. **Battery management system**: The I8N25-VB is suitable for the protection circuit in the battery management system, which can prevent the battery from overvoltage or overcurrent during the charging and discharging process, ensuring the safety of equipment operation and the long life of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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