I7S65-VB Product details
Product introduction:
The I7S65-VB is a single N-channel MOSFET in a TO251 package, designed for high-voltage applications, and suitable for power management and power conversion applications that require high voltage resistance, low power consumption and high efficiency. Its drain-source voltage (VDS) is as high as 650V, the maximum gate-source voltage (VGS) is ±30V, and the gate threshold voltage (Vth) is 3.5V. Under a 10V gate drive, the on-resistance is 500mΩ, and the maximum drain current supported is 9A. The device is based on Super Junction (SJ) multi-epitaxy (Multi-EPI) technology, with extremely high power handling capability and switching efficiency, and is very suitable for high-voltage switching power supplies and power system applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter | Description |
|-------------------|-----------------------------------------|
| **Package type** | TO251 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI technology|
| **Power consumption** | Suitable for high voltage and high power applications|
| **Switching speed** | Efficient and fast switching to reduce power loss|
| **Typical applications** | High voltage power management system, inverter, industrial control equipment |
Domain and module applications:
1. **High-voltage switch-mode power supply (SMPS)**
The 650V high withstand voltage of the I7S65-VB makes it very suitable for high-voltage switch-mode power supply (SMPS) design. Such power supplies are often used in industrial, communication and data center fields, requiring efficient power conversion capabilities. The low conduction loss and fast switching performance of the device help improve the energy efficiency of the system.
2. **Inverter**
In solar inverters, wind power inverters and other energy conversion equipment, the high voltage and high current capabilities of the I7S65-VB can provide stable current handling performance. Its super junction structure reduces conduction losses, allowing it to better handle high power loads when working in inverters.
3. **Industrial control equipment**
The I7S65-VB is suitable for power management in industrial control equipment, such as motor drives, grid controllers, etc. These systems usually need to handle high voltage and high current. The high reliability and strong voltage handling capability of I7S65-VB provide solid support for industrial equipment.
4. **Electric vehicle charger and power conversion system**
In the charging and power conversion modules of electric vehicles, I7S65-VB can provide efficient current transmission under high voltage environment to ensure the efficiency and safety of the charging process. Its high voltage resistance characteristics and super junction technology make it particularly suitable for power conversion and voltage stabilization equipment.
Technical support:
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