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I7N65-VB Product details
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1. I7N65-VB Product Introduction
I7N65-VB is a high-voltage single N-channel MOSFET in TO251 package based on Super Junction (SJ) multi-layer epitaxial technology. Its drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ±30V, threshold voltage (Vth) is 3.5V, on-resistance is 950mΩ@VGS=10V, and maximum drain current is 5A. With its high breakdown voltage and low conduction loss, this device is widely used in high-efficiency power management applications such as high-voltage power converters, lighting systems and industrial control.
I7N65-VB is a high-voltage single N-channel MOSFET in TO251 package based on Super Junction (SJ) multi-layer epitaxial technology. Its drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ±30V, threshold voltage (Vth) is 3.5V, on-resistance is 950mΩ@VGS=10V, and maximum drain current is 5A. With its high breakdown voltage and low conduction loss, this device is widely used in high-efficiency power management applications such as high-voltage power converters, lighting systems and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of I7N65-VB
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ (Super Junction) multi-layer epitaxial technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption (Ptot)**: 83W
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ (Super Junction) multi-layer epitaxial technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption (Ptot)**: 83W
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**
The I7N65-VB MOSFET is suitable for high-voltage DC-DC converters and AC-DC converters due to its high breakdown voltage of 650V. In these applications, Super Junction technology can reduce conduction losses and improve energy conversion efficiency, especially in power supply designs that require high-voltage isolation.
2. **LED lighting system**
In LED drivers and lighting systems, the I7N65-VB can provide a stable power supply to the LED array through its efficient current control and low loss characteristics. This helps reduce the power consumption of the system and extend the service life of the LED.
3. **Industrial control system**
The I7N65-VB is also commonly used in high-voltage control modules of industrial equipment, such as motor drivers, automation control systems, etc. Its high voltage handling capability and stable current control performance ensure efficient and reliable operation of the equipment under high-voltage environments.
4. **Inverter and Power Factor Correction (PFC) Circuit**
I7N65-VB MOSFET plays a key role in inverter and PFC circuits. Its high voltage and low loss characteristics enable it to provide efficient power management during the inverter and power regulation process, suitable for applications such as home appliances and power tools that require efficient conversion.
The device is widely used in many fields such as high-voltage power conversion, industrial control, lighting systems and inverters for its high voltage, high efficiency and reliable performance.
1. **High-voltage power converter**
The I7N65-VB MOSFET is suitable for high-voltage DC-DC converters and AC-DC converters due to its high breakdown voltage of 650V. In these applications, Super Junction technology can reduce conduction losses and improve energy conversion efficiency, especially in power supply designs that require high-voltage isolation.
2. **LED lighting system**
In LED drivers and lighting systems, the I7N65-VB can provide a stable power supply to the LED array through its efficient current control and low loss characteristics. This helps reduce the power consumption of the system and extend the service life of the LED.
3. **Industrial control system**
The I7N65-VB is also commonly used in high-voltage control modules of industrial equipment, such as motor drivers, automation control systems, etc. Its high voltage handling capability and stable current control performance ensure efficient and reliable operation of the equipment under high-voltage environments.
4. **Inverter and Power Factor Correction (PFC) Circuit**
I7N65-VB MOSFET plays a key role in inverter and PFC circuits. Its high voltage and low loss characteristics enable it to provide efficient power management during the inverter and power regulation process, suitable for applications such as home appliances and power tools that require efficient conversion.
The device is widely used in many fields such as high-voltage power conversion, industrial control, lighting systems and inverters for its high voltage, high efficiency and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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