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I7N60-VB Product details

Product introduction:

1. I7N60-VB Product Introduction

I7N60-VB is a high-voltage N-channel MOSFET in TO251 package, designed for applications requiring high voltage control, with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 5A. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 950mΩ (@VGS=10V). The device uses Super Junction Multi-EPI (SJ_Multi-EPI) technology to significantly reduce conduction loss and switching loss, provide higher efficiency, and perform particularly well in high-voltage applications. It is suitable for power conversion, industrial control, and power management modules in home appliances.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 5A 950mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
II. Detailed parameter description of I7N60-VB

1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology**: SJ_Multi-EPI (Super Junction Multilayer Epitaxial Technology)
9. **Maximum power dissipation**: 50W
10. **Operating temperature range**: -55°C to +150°C
11. **Maximum pulse current**: 20A

Domain and module applications:

3. Application fields and module examples

1. **Power converter (AC-DC, DC-DC)**: I7N60-VB is particularly suitable for high-voltage AC-DC and DC-DC power conversion modules. Due to its drain-source voltage of up to 650V and low on-resistance, it can effectively reduce energy loss in high-voltage environments and is suitable for power converters in industrial power supplies, server power supplies, and electric vehicle charging modules.

2. **Industrial control equipment**: In industrial automation and control equipment, this device can be used as a switching component for high-voltage control modules such as motor drives and PLC controllers. Its high voltage handling capability and low conduction loss enable it to perform well in applications with high power requirements and improve overall efficiency.

3. **Lighting power supply (LED driver)**: I7N60-VB is very suitable for high-voltage conversion modules in LED drive circuits, especially high-power LED lighting systems. Its high-voltage capability ensures stable operation in situations where the input voltage fluctuates greatly, improving the reliability and efficiency of the system.

4. **Household appliances and consumer electronics**: This MOSFET is also suitable for use in power management modules of household appliances (such as refrigerators, air conditioners, microwave ovens, etc.). Its high withstand voltage characteristics can meet the energy efficiency requirements of these devices under high voltage conditions and ensure the safety and stability of the circuit.

I7N60-VB is a high-efficiency, low-loss high-voltage MOSFET that is widely used in power conversion, industrial control and power management modules in household appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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