I5N40-VB Product details
Product introduction:
I5N40-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high-voltage power supply applications. Its drain-source voltage (VDS) is as high as 650V, the gate drive voltage (VGS) is ±30V, it has a low on-resistance (RDS(ON)) of 950mΩ, and can carry a drain current of 5A. I5N40-VB uses super junction (SJ) multi-epitaxial (Multi-EPI) technology, with excellent switching performance and voltage resistance, suitable for use in high-efficiency, high-power density applications such as power converters and industrial equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate drive voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 5A
8. **Technology type**: Superjunction (SJ) Multi-epitaxy (Multi-EPI) technology
9. **Maximum power consumption**: 125W
10. **Reverse recovery time (trr)**: 45ns
11. **Gate charge (Qg)**: 20nC
12. **Operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **Switching Power Supply (SMPS)**: The I5N40-VB is an ideal high-voltage switching device in switching power supplies for AC-DC and DC-DC converters. In these applications, MOSFETs are responsible for efficiently handling high-voltage inputs and ensuring regulated outputs, which is suitable for power management of consumer electronics, home appliances and other equipment.
2. **Industrial Inverter**: Due to its high withstand voltage and excellent switching performance, the I5N40-VB is very suitable for industrial inverter applications. These inverters are commonly used in motor drives, solar power generation systems, and uninterruptible power supplies (UPS). The device can effectively reduce power losses and improve system efficiency.
3. **LED Driver**: The I5N40-VB is suitable for power conversion modules in high-voltage LED drivers. Its high voltage and low on-resistance help achieve more efficient energy transmission and ensure stable operation of LED lamps. It is particularly suitable for high-power outdoor lighting and industrial lighting equipment.
4. **Electric vehicle charging pile**: This MOSFET can be used in high-voltage power management modules in electric vehicle charging piles. Its high withstand voltage of 650V enables it to handle high-voltage inputs, ensuring safe and efficient power conversion and supply while maintaining high efficiency and stability.
5. **High-voltage direct current transmission system (HVDC)**: The I5N40-VB plays an important role in high-voltage direct current transmission systems, especially in high-power conversion and control circuits. This MOSFET can withstand high-voltage shocks and work stably, ensuring reliable performance in grid-level power transmission systems.
The high withstand voltage and advanced super junction technology of the I5N40-VB enable it to excel in high-voltage power management, industrial equipment, and energy systems, and is widely used in high-efficiency and high-reliability scenarios.
Technical support:
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