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I4S60-VB Product details
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Product Introduction
**I4S60-VB** is a high voltage N-type MOSFET in TO251 package, using advanced SJ_Multi-EPI technology. This MOSFET is designed for high voltage switching and power conversion applications, with a drain-source voltage of up to 650V and low on-resistance, suitable for circuits requiring high voltage resistance and high efficiency. It provides high current handling capability while effectively reducing switching losses.
**I4S60-VB** is a high voltage N-type MOSFET in TO251 package, using advanced SJ_Multi-EPI technology. This MOSFET is designed for high voltage switching and power conversion applications, with a drain-source voltage of up to 650V and low on-resistance, suitable for circuits requiring high voltage resistance and high efficiency. It provides high current handling capability while effectively reducing switching losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO251
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applicable fields and modules
1. **High-voltage switching power supply**: With its high withstand voltage and low on-resistance, the I4S60-VB is very suitable for use in high-voltage switching power supply applications, especially when fast and efficient switching is required. It can reduce switching losses, improve power conversion efficiency, and ensure the stability of high-voltage power supply under high load conditions.
2. **LED drive circuit**: In high-power LED drive circuits, the I4S60-VB can provide stable voltage and current control. Its high voltage withstand capability makes it suitable for driving high-power LED lamps and ensures the reliability and high efficiency of the system in long-term operation.
3. **Uninterruptible power supply (UPS)**: Due to its high withstand voltage of 650V and low conduction loss, the I4S60-VB is an ideal choice for uninterruptible power supply (UPS) systems. It performs well in high-voltage environments, ensuring that the UPS system remains stable and efficient during instantaneous voltage conversion and high-load operation.
4. **Industrial inverter**: I4S60-VB can be used in industrial inverters, especially high-voltage control circuits. Its high voltage handling capability and SJ_Multi-EPI technology provide high switching efficiency and reduce system heat loss, suitable for industrial automation equipment.
5. **Power modules in home appliances**: This MOSFET can play a role in high-voltage power modules in home appliances, such as air conditioners, refrigerators, etc. Its high current handling capability and voltage resistance characteristics enable it to effectively reduce power consumption and improve operating efficiency in these devices.
1. **High-voltage switching power supply**: With its high withstand voltage and low on-resistance, the I4S60-VB is very suitable for use in high-voltage switching power supply applications, especially when fast and efficient switching is required. It can reduce switching losses, improve power conversion efficiency, and ensure the stability of high-voltage power supply under high load conditions.
2. **LED drive circuit**: In high-power LED drive circuits, the I4S60-VB can provide stable voltage and current control. Its high voltage withstand capability makes it suitable for driving high-power LED lamps and ensures the reliability and high efficiency of the system in long-term operation.
3. **Uninterruptible power supply (UPS)**: Due to its high withstand voltage of 650V and low conduction loss, the I4S60-VB is an ideal choice for uninterruptible power supply (UPS) systems. It performs well in high-voltage environments, ensuring that the UPS system remains stable and efficient during instantaneous voltage conversion and high-load operation.
4. **Industrial inverter**: I4S60-VB can be used in industrial inverters, especially high-voltage control circuits. Its high voltage handling capability and SJ_Multi-EPI technology provide high switching efficiency and reduce system heat loss, suitable for industrial automation equipment.
5. **Power modules in home appliances**: This MOSFET can play a role in high-voltage power modules in home appliances, such as air conditioners, refrigerators, etc. Its high current handling capability and voltage resistance characteristics enable it to effectively reduce power consumption and improve operating efficiency in these devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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