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I482-VB Product details
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Product Introduction:
I482-VB is a single N-channel MOSFET in TO251 package with 100V drain-source breakdown voltage and 35A maximum drain current. It adopts advanced trench technology and has low on-resistance (36mΩ@VGS=10V), suitable for applications requiring medium and high current and voltage control. With its efficient switching performance and durable design, the device is suitable for various power management and control systems.
I482-VB is a single N-channel MOSFET in TO251 package with 100V drain-source breakdown voltage and 35A maximum drain current. It adopts advanced trench technology and has low on-resistance (36mΩ@VGS=10V), suitable for applications requiring medium and high current and voltage control. With its efficient switching performance and durable design, the device is suitable for various power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter description:
- **Model**: I482-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 36mΩ@VGS=10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: I482-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 36mΩ@VGS=10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **Power management system**: The 100V high voltage capability and 35A current handling capability of the I482-VB make it ideal for power management modules such as battery protection circuits, high-efficiency DC-DC converters and inverters. In these applications, the MOSFET acts as a switching device to effectively control and manage the flow of electrical energy, thereby improving the efficiency of the system.
2. **Motor drive**: The device can be used for drive control of small and medium-sized motors, especially where higher voltages and medium currents need to be controlled. The low on-resistance of the I482-VB ensures that power losses in the motor drive system are reduced, improving overall efficiency.
3. **Automotive electronics**: In automotive electronics, the I482-VB can be used in power distribution modules, starters, and other power control applications. Its high current handling capability and low on-resistance make it suitable for switching and control circuits in automotive electrical systems.
4. **Industrial Control**: In industrial equipment, this MOSFET can be used to control and regulate a variety of industrial loads, such as lighting systems, electric heating equipment, and other modules that require precise current control. Its durability and high efficiency enable it to provide stable performance in harsh industrial environments.
The high voltage, high efficiency, and low on-resistance of the I482-VB make it an ideal choice for power management, drive control, and industrial applications.
1. **Power management system**: The 100V high voltage capability and 35A current handling capability of the I482-VB make it ideal for power management modules such as battery protection circuits, high-efficiency DC-DC converters and inverters. In these applications, the MOSFET acts as a switching device to effectively control and manage the flow of electrical energy, thereby improving the efficiency of the system.
2. **Motor drive**: The device can be used for drive control of small and medium-sized motors, especially where higher voltages and medium currents need to be controlled. The low on-resistance of the I482-VB ensures that power losses in the motor drive system are reduced, improving overall efficiency.
3. **Automotive electronics**: In automotive electronics, the I482-VB can be used in power distribution modules, starters, and other power control applications. Its high current handling capability and low on-resistance make it suitable for switching and control circuits in automotive electrical systems.
4. **Industrial Control**: In industrial equipment, this MOSFET can be used to control and regulate a variety of industrial loads, such as lighting systems, electric heating equipment, and other modules that require precise current control. Its durability and high efficiency enable it to provide stable performance in harsh industrial environments.
The high voltage, high efficiency, and low on-resistance of the I482-VB make it an ideal choice for power management, drive control, and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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