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I478-VB Product details
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1. I478-VB Product Introduction
I478-VB is a single N-channel power MOSFET packaged in TO251. It is designed with advanced Trench technology and has high efficiency conduction performance and low on-resistance. Its drain-source voltage (VDS) is 100V, gate-source voltage (VGS) is ±20V, gate threshold voltage (Vth) is 1.8V, and on-resistance (RDS(ON)) is 110mΩ at VGS=10V. The device supports a maximum drain current (ID) of 15A and is suitable for a variety of high-efficiency switching and current control applications.
I478-VB is a single N-channel power MOSFET packaged in TO251. It is designed with advanced Trench technology and has high efficiency conduction performance and low on-resistance. Its drain-source voltage (VDS) is 100V, gate-source voltage (VGS) is ±20V, gate threshold voltage (Vth) is 1.8V, and on-resistance (RDS(ON)) is 110mΩ at VGS=10V. The device supports a maximum drain current (ID) of 15A and is suitable for a variety of high-efficiency switching and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of I478-VB
- **Package type**: TO251
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Power dissipation**: 40W
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: About 800 pF
- **Switching speed**: Fast
- **Package type**: TO251
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Power dissipation**: 40W
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: About 800 pF
- **Switching speed**: Fast
Domain and module applications：
III. I478-VB Application Fields and Modules
The I478-VB MOSFET has good electrical performance and is suitable for the following application fields and modules:
1. **DC-DC Converter**: The high drain-source voltage and low on-resistance of the I478-VB make it very suitable for use in medium-power DC-DC converters. Such converters are widely used in communication equipment, power management systems, and embedded systems. The fast switching characteristics of the MOSFET ensure efficient conversion of electrical energy.
2. **Power Management**: In applications requiring high-efficiency power management, the I478-VB can be used as an efficient switching device, especially in switching power supplies (SMPS) and AC-DC converters, which can help improve system efficiency and reduce heat loss.
3. **Motor Drive Control**: The device supports drain currents up to 15A and is very suitable for switching components in small motor drive control systems, especially those control circuits that require low loss and high-speed switching.
4. **Load switch**: The high withstand voltage and medium current handling capability of I478-VB ensure its reliability when switching large current loads. It is suitable for load switch applications in industrial equipment and battery management systems.
5. **Battery protection circuit**: The high withstand voltage and high efficiency conduction performance of I478-VB make it an ideal choice for battery protection circuits in battery management systems, which can effectively protect batteries from overcurrent, overvoltage and other problems.
The I478-VB MOSFET has good electrical performance and is suitable for the following application fields and modules:
1. **DC-DC Converter**: The high drain-source voltage and low on-resistance of the I478-VB make it very suitable for use in medium-power DC-DC converters. Such converters are widely used in communication equipment, power management systems, and embedded systems. The fast switching characteristics of the MOSFET ensure efficient conversion of electrical energy.
2. **Power Management**: In applications requiring high-efficiency power management, the I478-VB can be used as an efficient switching device, especially in switching power supplies (SMPS) and AC-DC converters, which can help improve system efficiency and reduce heat loss.
3. **Motor Drive Control**: The device supports drain currents up to 15A and is very suitable for switching components in small motor drive control systems, especially those control circuits that require low loss and high-speed switching.
4. **Load switch**: The high withstand voltage and medium current handling capability of I478-VB ensure its reliability when switching large current loads. It is suitable for load switch applications in industrial equipment and battery management systems.
5. **Battery protection circuit**: The high withstand voltage and high efficiency conduction performance of I478-VB make it an ideal choice for battery protection circuits in battery management systems, which can effectively protect batteries from overcurrent, overvoltage and other problems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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